| Presentation | 1998/1/21 Single Low Voltage supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain Variable Attenuator for 1.9-GHz Personal Handy Phone Systems Hirotsugu Wakimoto, Masami Nagaoka, Toshiki Seshita, Katsue Kawakyu, Yoshiko Ikeda, Kazuya Nishihori, Yoshiaki Kitaura, Atsushi Kameyama, Naotaka Uchitomi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A GaAs power amplifier with a low-distortion, 10-dB gain attenuator has been developed for 1.9-GHz personal handy phone system (PHS). Single low 2.4-V supply operation was achieved by using power MESFETs with p-pocket layers. Furthermore, on account of an attenuator with cascaded shunt FET structure, very low 600-kHz adjacent channel leakage power (ACP) with sufficient, constant output power was attained regardless of any controlled gain. An output power of 21.1dBm, a low dissipated current of 157mA and a high power-added efficiency of 37.2% were obtained with ACP of -55dBc. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Gallium Arsenide / PHS / Power Amplifier / Low-Distortion / Variable Attenuator / P-pocket MESFET |
| Paper # | ICD97-197 |
| Date of Issue |
| Conference Information | |
| Committee | ICD |
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| Conference Date | 1998/1/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Single Low Voltage supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain Variable Attenuator for 1.9-GHz Personal Handy Phone Systems |
| Sub Title (in English) | |
| Keyword(1) | Gallium Arsenide |
| Keyword(2) | PHS |
| Keyword(3) | Power Amplifier |
| Keyword(4) | Low-Distortion |
| Keyword(5) | Variable Attenuator |
| Keyword(6) | P-pocket MESFET |
| 1st Author's Name | Hirotsugu Wakimoto |
| 1st Author's Affiliation | Toshiba R&D Center() |
| 2nd Author's Name | Masami Nagaoka |
| 2nd Author's Affiliation | Toshiba R&D Center |
| 3rd Author's Name | Toshiki Seshita |
| 3rd Author's Affiliation | Toshiba R&D Center |
| 4th Author's Name | Katsue Kawakyu |
| 4th Author's Affiliation | Toshiba R&D Center |
| 5th Author's Name | Yoshiko Ikeda |
| 5th Author's Affiliation | Toshiba R&D Center |
| 6th Author's Name | Kazuya Nishihori |
| 6th Author's Affiliation | Toshiba R&D Center |
| 7th Author's Name | Yoshiaki Kitaura |
| 7th Author's Affiliation | Toshiba R&D Center |
| 8th Author's Name | Atsushi Kameyama |
| 8th Author's Affiliation | Toshiba R&D Center |
| 9th Author's Name | Naotaka Uchitomi |
| 9th Author's Affiliation | Toshiba R&D Center |
| Date | 1998/1/21 |
| Paper # | ICD97-197 |
| Volume (vol) | vol.97 |
| Number (no) | 480 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |