Presentation 1997/12/11
Ultra High-Speed GaAs MESFET IC Modules using Flip Chip Bonding Technique
Hiroyuki Kikuchi, Hideki Tsunetsugu, Makoto Hirano, Yuhki Imai,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In order to realize ultra high-speed modules for 40 Gbit/s optical transmission systems, distributed amplifier and signal distributor ICs have been developed using inverted microstrip line design technique and 0.1-μm-gate-length GaAs MESFET with a multilayer interconnection structure. These ICs were mounted in a chip-size-cavity package using transferred microsolder bumps. An amplifier module achieved a 3 dB bandwidth of more than 50 GHz and a gain of 8 dB. A 3 dB bandwidth of a signal distributor was 40 GHz and a loss was 2 dB. These modules were demonstrated at 40 Gbit/s.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaAs MESFET / Amplifier / Distributor / Microstrip line / Flip chip / Bump
Paper # ICD97-177
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Conference Date 1997/12/11(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Ultra High-Speed GaAs MESFET IC Modules using Flip Chip Bonding Technique
Sub Title (in English)
Keyword(1) GaAs MESFET
Keyword(2) Amplifier
Keyword(3) Distributor
Keyword(4) Microstrip line
Keyword(5) Flip chip
Keyword(6) Bump
1st Author's Name Hiroyuki Kikuchi
1st Author's Affiliation NTT Optical Network Systems Laboratories()
2nd Author's Name Hideki Tsunetsugu
2nd Author's Affiliation NTT Opto-electronics Laboratories
3rd Author's Name Makoto Hirano
3rd Author's Affiliation NTT System Electronics Laboratories
4th Author's Name Yuhki Imai
4th Author's Affiliation NTT Electronics Corporation
Date 1997/12/11
Paper # ICD97-177
Volume (vol) vol.97
Number (no) 435
Page pp.pp.-
#Pages 7
Date of Issue