Presentation | 1997/10/16 Design of a 1.8V-only NAND Flash Memory Toru Tanzawa, Tomoharu Tanaka, Ken Takeuchi, Hiroshi Nakamura, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Three circuits have been designed for a 1.8V-only NAND Flash memory. The proposed Vpp switch realizes high-speed switching even at a supply voltage of 1.8V. The row decoder using the Vpp switch suppresses standby current below 10uA. Charge pump circuits with maximized use efficiency reduces the circuit area by 40%. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | NAND / Flash memory / 1.8V / Vpp switch / Row decoder / Charge pump |
Paper # | ICD97-150-158 |
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Conference Information | |
Committee | ICD |
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Conference Date | 1997/10/16(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
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Assistant |
Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Design of a 1.8V-only NAND Flash Memory |
Sub Title (in English) | |
Keyword(1) | NAND |
Keyword(2) | Flash memory |
Keyword(3) | 1.8V |
Keyword(4) | Vpp switch |
Keyword(5) | Row decoder |
Keyword(6) | Charge pump |
1st Author's Name | Toru Tanzawa |
1st Author's Affiliation | Microelectronics Engineering Laboratory, Toshiba Corporation() |
2nd Author's Name | Tomoharu Tanaka |
2nd Author's Affiliation | Microelectronics Engineering Laboratory, Toshiba Corporation |
3rd Author's Name | Ken Takeuchi |
3rd Author's Affiliation | Microelectronics Engineering Laboratory, Toshiba Corporation |
4th Author's Name | Hiroshi Nakamura |
4th Author's Affiliation | Microelectronics Engineering Laboratory, Toshiba Corporation |
Date | 1997/10/16 |
Paper # | ICD97-150-158 |
Volume (vol) | vol.97 |
Number (no) | 318 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |