Presentation 1997/10/16
Design of a 1.8V-only NAND Flash Memory
Toru Tanzawa, Tomoharu Tanaka, Ken Takeuchi, Hiroshi Nakamura,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Three circuits have been designed for a 1.8V-only NAND Flash memory. The proposed Vpp switch realizes high-speed switching even at a supply voltage of 1.8V. The row decoder using the Vpp switch suppresses standby current below 10uA. Charge pump circuits with maximized use efficiency reduces the circuit area by 40%.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) NAND / Flash memory / 1.8V / Vpp switch / Row decoder / Charge pump
Paper # ICD97-150-158
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Conference Date 1997/10/16(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Design of a 1.8V-only NAND Flash Memory
Sub Title (in English)
Keyword(1) NAND
Keyword(2) Flash memory
Keyword(3) 1.8V
Keyword(4) Vpp switch
Keyword(5) Row decoder
Keyword(6) Charge pump
1st Author's Name Toru Tanzawa
1st Author's Affiliation Microelectronics Engineering Laboratory, Toshiba Corporation()
2nd Author's Name Tomoharu Tanaka
2nd Author's Affiliation Microelectronics Engineering Laboratory, Toshiba Corporation
3rd Author's Name Ken Takeuchi
3rd Author's Affiliation Microelectronics Engineering Laboratory, Toshiba Corporation
4th Author's Name Hiroshi Nakamura
4th Author's Affiliation Microelectronics Engineering Laboratory, Toshiba Corporation
Date 1997/10/16
Paper # ICD97-150-158
Volume (vol) vol.97
Number (no) 318
Page pp.pp.-
#Pages 8
Date of Issue