Presentation | 1997/10/16 A 250-MHz Operation 0.25-μm 1-Mb SRAM Macrocell Nobutaro SHIBATA, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Design techniques for mega-bit-class size-configurable SRAM macrocells are described. To shorten the design turn-around-time, the methodology of abutting nine kinds of leaf cells are employed with via-hole programming in address decoder. A new squashed memory-cell layout for CMOS SRAM's is proposed to reduce the access time and power dissipation. To shorten the time for writing data, writing buffers are connected to bitlines without multiplexer. Also, read-out circuitry using current-mode sense amplifiers is mentioned. A 1-Mb SRAM test chip was fabricated with a 0.25-μm bulk-CMOS process. The SRAM has demonstrated 250-MHz operation and 145-mW power dissipation at a 2.5-V typical power supply. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | SRAM / macrocell / size configurable / current-mode sense amplifier |
Paper # | ICD97-150-158 |
Date of Issue |
Conference Information | |
Committee | ICD |
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Conference Date | 1997/10/16(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
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Assistant |
Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A 250-MHz Operation 0.25-μm 1-Mb SRAM Macrocell |
Sub Title (in English) | |
Keyword(1) | SRAM |
Keyword(2) | macrocell |
Keyword(3) | size configurable |
Keyword(4) | current-mode sense amplifier |
1st Author's Name | Nobutaro SHIBATA |
1st Author's Affiliation | NTT System Electronics Laboratories() |
Date | 1997/10/16 |
Paper # | ICD97-150-158 |
Volume (vol) | vol.97 |
Number (no) | 318 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |