Presentation | 1997/9/26 Non-Isothermal Device Simulation including Three-Dimensional Thermal Effect Hirobumi Kawashima, Ryo Dang, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Thermal three-dimensional effects on electrical characteristics of a small-size transistor, are reported, considering self-heating of individual devices and interaction among neighboring devices. The tool for this simulation is a combination of a non-isothermal device simulator and a three-dimensional thermal simulator. It is found that the temperature inside a chip significantly depends on its circuit layout. In addition, it is shown that the electrical characteristics of a transistor vary with the heat induced from other devices, even if its electrical and geometrical conditions remain unchanged. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | device simulation / thermal simulation / self-heating / thermal interaction / MOSFET |
Paper # | ICD97-143 |
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Conference Information | |
Committee | ICD |
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Conference Date | 1997/9/26(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Non-Isothermal Device Simulation including Three-Dimensional Thermal Effect |
Sub Title (in English) | |
Keyword(1) | device simulation |
Keyword(2) | thermal simulation |
Keyword(3) | self-heating |
Keyword(4) | thermal interaction |
Keyword(5) | MOSFET |
1st Author's Name | Hirobumi Kawashima |
1st Author's Affiliation | Hosei University() |
2nd Author's Name | Ryo Dang |
2nd Author's Affiliation | Hosei University |
Date | 1997/9/26 |
Paper # | ICD97-143 |
Volume (vol) | vol.97 |
Number (no) | 275 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |