Presentation 1997/9/26
Non-Isothermal Device Simulation including Three-Dimensional Thermal Effect
Hirobumi Kawashima, Ryo Dang,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Thermal three-dimensional effects on electrical characteristics of a small-size transistor, are reported, considering self-heating of individual devices and interaction among neighboring devices. The tool for this simulation is a combination of a non-isothermal device simulator and a three-dimensional thermal simulator. It is found that the temperature inside a chip significantly depends on its circuit layout. In addition, it is shown that the electrical characteristics of a transistor vary with the heat induced from other devices, even if its electrical and geometrical conditions remain unchanged.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) device simulation / thermal simulation / self-heating / thermal interaction / MOSFET
Paper # ICD97-143
Date of Issue

Conference Information
Committee ICD
Conference Date 1997/9/26(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Non-Isothermal Device Simulation including Three-Dimensional Thermal Effect
Sub Title (in English)
Keyword(1) device simulation
Keyword(2) thermal simulation
Keyword(3) self-heating
Keyword(4) thermal interaction
Keyword(5) MOSFET
1st Author's Name Hirobumi Kawashima
1st Author's Affiliation Hosei University()
2nd Author's Name Ryo Dang
2nd Author's Affiliation Hosei University
Date 1997/9/26
Paper # ICD97-143
Volume (vol) vol.97
Number (no) 275
Page pp.pp.-
#Pages 8
Date of Issue