Presentation 1997/9/26
Analysis of Low-Frequency Dispersive Effects by Measuring S-paremeter and Using Physical FET Model
Hirokazu Ichikawa, Kazuya Tokumasu, Hiroshi Kondoh,
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Abstract(in English) We have done the following to investigate the mechanism and origin of low-frequency dispersion of drain current of GaAs MESFET which is fabricated by ion-implantation method (a)measuring the frequency and time dispersion characteristics of drain current and S-parameters (b)calculating time dispersion of FET's circuit elements Having examined the correlation of time dispersion characteristics between drain current and circuit elements by using the Shockley model, we cocluded that two origins of low-frequency dispersive effects are dominant. Those are (1)Deep level that exists in the Gate/Channel interface and (2)Deep level that exists in the Channel.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) low-frequency dispersive effects / Gate/Drain lag / GaAS MESFET / ion-implantation / S-parameter / Shockley model
Paper # ICD97-137
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Conference Date 1997/9/26(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Analysis of Low-Frequency Dispersive Effects by Measuring S-paremeter and Using Physical FET Model
Sub Title (in English)
Keyword(1) low-frequency dispersive effects
Keyword(2) Gate/Drain lag
Keyword(3) GaAS MESFET
Keyword(4) ion-implantation
Keyword(5) S-parameter
Keyword(6) Shockley model
1st Author's Name Hirokazu Ichikawa
1st Author's Affiliation Hitachi, Ltd. Central Research Lab. Communication Systems Research Department()
2nd Author's Name Kazuya Tokumasu
2nd Author's Affiliation Hitachi, Ltd. Central Research Lab. Communication Systems Research Department
3rd Author's Name Hiroshi Kondoh
3rd Author's Affiliation Hitachi, Ltd. Central Research Lab. Communication Systems Research Department
Date 1997/9/26
Paper # ICD97-137
Volume (vol) vol.97
Number (no) 275
Page pp.pp.-
#Pages 11
Date of Issue