Presentation | 1997/9/26 Two-Dimensional Analysis of Carrier-Blocking Effects and Surface-State Effects on Cutoff Frequency Characteristics of Collector-Up HBTs N. Kurosawa, K. Horio, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have made two-dimensional simulation of cutoff frequency f_T characteristics of collector-up AlGaAs/GaAs HBTs and studied so-called carrier blocking effects that lead to the degradation of f_T. It is found that by setting the base electrode closer to the intrinsic collector, the blocked carriers can be absorbed by the electrode and the degradation of f_T is somewhat suppressed. However, the current gain is found to be heavily degraded. We have also studied effects of surface states on the f_T characteristics of collector-up HBTs. It is found that carrier accumulation phenomenon occurs due to the carrier flowing into the surface-state layer in the base, leading to the long base-delay time and the very low f_T. It is concluded that to avoid the above unfavorable phenomena and to maintain high f_T and current gain, the collector width must be rather wider than the emitter width. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaAs / HBT / collector-up / cutoff frequency / carrier-blocking / surface state / device simulation |
Paper # | ICD97-136 |
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Conference Information | |
Committee | ICD |
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Conference Date | 1997/9/26(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Two-Dimensional Analysis of Carrier-Blocking Effects and Surface-State Effects on Cutoff Frequency Characteristics of Collector-Up HBTs |
Sub Title (in English) | |
Keyword(1) | GaAs |
Keyword(2) | HBT |
Keyword(3) | collector-up |
Keyword(4) | cutoff frequency |
Keyword(5) | carrier-blocking |
Keyword(6) | surface state |
Keyword(7) | device simulation |
1st Author's Name | N. Kurosawa |
1st Author's Affiliation | Faculty of Systems Engineering, Shibaura Institute of Technology() |
2nd Author's Name | K. Horio |
2nd Author's Affiliation | Faculty of Systems Engineering, Shibaura Institute of Technology |
Date | 1997/9/26 |
Paper # | ICD97-136 |
Volume (vol) | vol.97 |
Number (no) | 275 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |