Presentation 1997/9/26
Two-Dimensional Numerical Analysis of Gate-Lag Phenomena in Recessed-Gate GaAs MESFETs
T. Yamada, A. Wakabayashi, K. Horio,
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Abstract(in English) We have made two-dimensional simulation of recessed-gate GaAs MESFETs considering surface-state effects, and studied how the gate turn-on characteristics are affected by the recess depth d_r and the distance between the gate and the recess edge L_r. It is found that if d_r is deep and L_r is set to be very narrow, the gate-lag extinguishes for a case with surface states considered on the horizontal planes only. However, in a realistic case with surface states included on both the horizontal and the vertical planes, the gate-lag is not eliminated even if d_r is made rather deep. This is attributed to the fact that when the deep-acceptor-like surface state acts as a hole trap, the thickness of surface depletion layer under the same plane as the source and drain blectrodes can change much by the applied gate bias.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaAs / MESFET / gate-lag / recessed-gate structure / surface state / device simulation
Paper # ICD97-135
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Conference Date 1997/9/26(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Two-Dimensional Numerical Analysis of Gate-Lag Phenomena in Recessed-Gate GaAs MESFETs
Sub Title (in English)
Keyword(1) GaAs
Keyword(2) MESFET
Keyword(3) gate-lag
Keyword(4) recessed-gate structure
Keyword(5) surface state
Keyword(6) device simulation
1st Author's Name T. Yamada
1st Author's Affiliation Faculty of Systems Engineering, Shibaura Institute of Technology()
2nd Author's Name A. Wakabayashi
2nd Author's Affiliation Faculty of Systems Engineering, Shibaura Institute of Technology
3rd Author's Name K. Horio
3rd Author's Affiliation Faculty of Systems Engineering, Shibaura Institute of Technology
Date 1997/9/26
Paper # ICD97-135
Volume (vol) vol.97
Number (no) 275
Page pp.pp.-
#Pages 6
Date of Issue