Presentation | 1997/9/25 Convergence of a Device Simulation and Floating Body Effect of SOIMOSFETs T. Saito, T. Toyabe, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | There still remain some convergence problems in device simulation. By improving the convergence of computation, floating body effect in SOIMOSFET have been successfully simulated. Linearization of the impact ionization rate term in the Newton iteration is essential for the convergence. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Simulation / SOIMOSFET / Floating body effect / Convergence / Ionization rate |
Paper # | ICD97-133 |
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Conference Information | |
Committee | ICD |
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Conference Date | 1997/9/25(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Convergence of a Device Simulation and Floating Body Effect of SOIMOSFETs |
Sub Title (in English) | |
Keyword(1) | Simulation |
Keyword(2) | SOIMOSFET |
Keyword(3) | Floating body effect |
Keyword(4) | Convergence |
Keyword(5) | Ionization rate |
1st Author's Name | T. Saito |
1st Author's Affiliation | Department of Information and Computer Sciences, Toyo University() |
2nd Author's Name | T. Toyabe |
2nd Author's Affiliation | Department of Information and Computer Sciences, Toyo University |
Date | 1997/9/25 |
Paper # | ICD97-133 |
Volume (vol) | vol.97 |
Number (no) | 274 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |