Presentation 1997/9/25
Convergence of a Device Simulation and Floating Body Effect of SOIMOSFETs
T. Saito, T. Toyabe,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) There still remain some convergence problems in device simulation. By improving the convergence of computation, floating body effect in SOIMOSFET have been successfully simulated. Linearization of the impact ionization rate term in the Newton iteration is essential for the convergence.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Simulation / SOIMOSFET / Floating body effect / Convergence / Ionization rate
Paper # ICD97-133
Date of Issue

Conference Information
Committee ICD
Conference Date 1997/9/25(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Convergence of a Device Simulation and Floating Body Effect of SOIMOSFETs
Sub Title (in English)
Keyword(1) Simulation
Keyword(2) SOIMOSFET
Keyword(3) Floating body effect
Keyword(4) Convergence
Keyword(5) Ionization rate
1st Author's Name T. Saito
1st Author's Affiliation Department of Information and Computer Sciences, Toyo University()
2nd Author's Name T. Toyabe
2nd Author's Affiliation Department of Information and Computer Sciences, Toyo University
Date 1997/9/25
Paper # ICD97-133
Volume (vol) vol.97
Number (no) 274
Page pp.pp.-
#Pages 6
Date of Issue