| Presentation | 1997/9/25 Simulation Study on Extraction Mechanism of Generated Holes in the Floating-body SOI MOSFETs Kouichi NOSE, Rimon IKENO, Kunihiro ASADA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In order to suppress the floating-body effect of fully-depleted SOI MOSFET's, a method by implantation of ionized Ar in source/drain region has been proposed. In this study, we investigated the mechanism of promoting the flow of the excess holes in body to source region in Ar-implanted SOI MOSFET using 2-D device simulation. From this simulation, we conclude that it is necessary to introduce not only the effect where recombination rate is enhanced in Ar-implanted region but also the effect where bandgap is narrowed in the Ar-implanted region with extended lattice by Ar in the center of Si-lattice. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SOI MOSFET / Floating-body effect / implantation of ionized Ar / 2-D device simulation |
| Paper # | ICD97-132 |
| Date of Issue |
| Conference Information | |
| Committee | ICD |
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| Conference Date | 1997/9/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Simulation Study on Extraction Mechanism of Generated Holes in the Floating-body SOI MOSFETs |
| Sub Title (in English) | |
| Keyword(1) | SOI MOSFET |
| Keyword(2) | Floating-body effect |
| Keyword(3) | implantation of ionized Ar |
| Keyword(4) | 2-D device simulation |
| 1st Author's Name | Kouichi NOSE |
| 1st Author's Affiliation | Graduate School of Engineering, University of Tokyo() |
| 2nd Author's Name | Rimon IKENO |
| 2nd Author's Affiliation | Graduate School of Engineering, University of Tokyo:(Present adress)Texas Instruments Tsukuba R&D Center |
| 3rd Author's Name | Kunihiro ASADA |
| 3rd Author's Affiliation | Graduate School of Engineering, University of Tokyo:(Present adress)VLSI Design and Education Center, University of Tokyo |
| Date | 1997/9/25 |
| Paper # | ICD97-132 |
| Volume (vol) | vol.97 |
| Number (no) | 274 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |