Presentation 1997/9/25
IC Process Optimization Using Technology CAD System
N. Miura, K. Fukuda, K. Nishi,
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Abstract(in English) In scaled-down process, channel profile and drain structure have become so complecated that it would be difficult to optimize process sequences via real experiments alone. It is consequently important to optimize process sequences with TCAD simulators for shorter development cycles and lower fabrication costs. We present a developed methodology which can optimize process sequences and evaluate the device performance trade-offs in 0.3μm level MOSFETs with TCAD simulators and responce surface models(RSM).
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Keyword(in English) Response Surface Model / Local Modeling / Parameter Optimization / Sensitivity Analysis / Statistic Analysis
Paper # ICD97-129
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Committee ICD
Conference Date 1997/9/25(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) IC Process Optimization Using Technology CAD System
Sub Title (in English)
Keyword(1) Response Surface Model
Keyword(2) Local Modeling
Keyword(3) Parameter Optimization
Keyword(4) Sensitivity Analysis
Keyword(5) Statistic Analysis
1st Author's Name N. Miura
1st Author's Affiliation VLSI Reserch & Development Center, Oki Electric Industry Co., Ltd.()
2nd Author's Name K. Fukuda
2nd Author's Affiliation VLSI Reserch & Development Center, Oki Electric Industry Co., Ltd.
3rd Author's Name K. Nishi
3rd Author's Affiliation VLSI Reserch & Development Center, Oki Electric Industry Co., Ltd.
Date 1997/9/25
Paper # ICD97-129
Volume (vol) vol.97
Number (no) 274
Page pp.pp.-
#Pages 8
Date of Issue