Presentation 1997/9/25
TCAD Based Statistical Analysis of MOSFET's
N. Shigyou, T. Morishita, K. Sugawara, N. Wakita, Y. Asahi,
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Abstract(in English) The statistical process fluctuations limit the parametric yield. Thus, the statistical simulation is needed for a robust design of process, device and circuit. This article describes the statistical simulation of MOSFTTs using Technology CAD (TCAD). We obtained BSIM3v3 worst-case models based on process fluctuations.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) TCAD / sensitivity analysis / statistical analysis / BSIM3v3 / worst-case model / pdFab
Paper # ICD97-128
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Conference Date 1997/9/25(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) TCAD Based Statistical Analysis of MOSFET's
Sub Title (in English)
Keyword(1) TCAD
Keyword(2) sensitivity analysis
Keyword(3) statistical analysis
Keyword(4) BSIM3v3
Keyword(5) worst-case model
Keyword(6) pdFab
1st Author's Name N. Shigyou
1st Author's Affiliation Microelectronics Engineering Laboratory, Toshiba Corporation()
2nd Author's Name T. Morishita
2nd Author's Affiliation Toshiba CAE Systems Incorporated
3rd Author's Name K. Sugawara
3rd Author's Affiliation Semiconductor Division, Toshiba Corporation
4th Author's Name N. Wakita
4th Author's Affiliation Semiconductor DA & Test Center, Toshiba Corporation
5th Author's Name Y. Asahi
5th Author's Affiliation Semiconductor Division, Toshiba Corporation
Date 1997/9/25
Paper # ICD97-128
Volume (vol) vol.97
Number (no) 274
Page pp.pp.-
#Pages 8
Date of Issue