Presentation | 1997/9/25 TCAD Based Statistical Analysis of MOSFET's N. Shigyou, T. Morishita, K. Sugawara, N. Wakita, Y. Asahi, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The statistical process fluctuations limit the parametric yield. Thus, the statistical simulation is needed for a robust design of process, device and circuit. This article describes the statistical simulation of MOSFTTs using Technology CAD (TCAD). We obtained BSIM3v3 worst-case models based on process fluctuations. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | TCAD / sensitivity analysis / statistical analysis / BSIM3v3 / worst-case model / pdFab |
Paper # | ICD97-128 |
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Conference Information | |
Committee | ICD |
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Conference Date | 1997/9/25(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | TCAD Based Statistical Analysis of MOSFET's |
Sub Title (in English) | |
Keyword(1) | TCAD |
Keyword(2) | sensitivity analysis |
Keyword(3) | statistical analysis |
Keyword(4) | BSIM3v3 |
Keyword(5) | worst-case model |
Keyword(6) | pdFab |
1st Author's Name | N. Shigyou |
1st Author's Affiliation | Microelectronics Engineering Laboratory, Toshiba Corporation() |
2nd Author's Name | T. Morishita |
2nd Author's Affiliation | Toshiba CAE Systems Incorporated |
3rd Author's Name | K. Sugawara |
3rd Author's Affiliation | Semiconductor Division, Toshiba Corporation |
4th Author's Name | N. Wakita |
4th Author's Affiliation | Semiconductor DA & Test Center, Toshiba Corporation |
5th Author's Name | Y. Asahi |
5th Author's Affiliation | Semiconductor Division, Toshiba Corporation |
Date | 1997/9/25 |
Paper # | ICD97-128 |
Volume (vol) | vol.97 |
Number (no) | 274 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |