Presentation 1997/9/25
Grid Size Independent Inversion Layer Carrier Mobility Model
Toshiyuki Enda, Naoyuki Shigyo,
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Abstract(in English) It is indispensable for accurate drain current simuulation to deal with riversion layer carrier mobility reasonably. However, it has been found that the model of the inversion layer carrier mobility proposed by Watt or Shin have strong grid size dependency. In this paper, the authors clear the cause of the grid size dependency of the Shin's model, and describe the inversion layer carrier mobility model independent on grid sizes. This model gives the effective carrier mobility for each control volumes.
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Keyword(in English) Device simulation / Inversion layer / Mobility / Grid size dependency / Model / Accuracy
Paper # ICD97-124
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Committee ICD
Conference Date 1997/9/25(1days)
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Paper Information
Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Grid Size Independent Inversion Layer Carrier Mobility Model
Sub Title (in English)
Keyword(1) Device simulation
Keyword(2) Inversion layer
Keyword(3) Mobility
Keyword(4) Grid size dependency
Keyword(5) Model
Keyword(6) Accuracy
1st Author's Name Toshiyuki Enda
1st Author's Affiliation ULSI Device Engineering Laboratory, TOSHIBA Corporation()
2nd Author's Name Naoyuki Shigyo
2nd Author's Affiliation Microelectronics Engineering Laboratory, TOSHIBA Corporation
Date 1997/9/25
Paper # ICD97-124
Volume (vol) vol.97
Number (no) 274
Page pp.pp.-
#Pages 6
Date of Issue