| Presentation | 1997/9/25 Simulation of transient enhanced diffusion Masashi UEMATSU, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The dependence of transient enhanced diffusion (TED) on annealing time, implantation dose, energy, species, and annealing temperature have been simulated using a unified set of parameters. The kinetics of cluster evolution is combined with the mechanism of impurity diffusion, and the decrease in the cluster evolution rate with time is taken into account. The simulation explains complex characteristics of TED, which are attributed to the fact that the dependence of implantation species, energy, dose, and annealing time are closely related to one another. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | transient enhanced diffusion / simulation / silicon / self-interstitial clusters |
| Paper # | ICD97-121 |
| Date of Issue |
| Conference Information | |
| Committee | ICD |
|---|---|
| Conference Date | 1997/9/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Simulation of transient enhanced diffusion |
| Sub Title (in English) | |
| Keyword(1) | transient enhanced diffusion |
| Keyword(2) | simulation |
| Keyword(3) | silicon |
| Keyword(4) | self-interstitial clusters |
| 1st Author's Name | Masashi UEMATSU |
| 1st Author's Affiliation | NTT System Electronics Laboratories() |
| Date | 1997/9/25 |
| Paper # | ICD97-121 |
| Volume (vol) | vol.97 |
| Number (no) | 274 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |