Presentation 1997/9/25
Simulation of transient enhanced diffusion
Masashi UEMATSU,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The dependence of transient enhanced diffusion (TED) on annealing time, implantation dose, energy, species, and annealing temperature have been simulated using a unified set of parameters. The kinetics of cluster evolution is combined with the mechanism of impurity diffusion, and the decrease in the cluster evolution rate with time is taken into account. The simulation explains complex characteristics of TED, which are attributed to the fact that the dependence of implantation species, energy, dose, and annealing time are closely related to one another.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) transient enhanced diffusion / simulation / silicon / self-interstitial clusters
Paper # ICD97-121
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Conference Information
Committee ICD
Conference Date 1997/9/25(1days)
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Paper Information
Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Simulation of transient enhanced diffusion
Sub Title (in English)
Keyword(1) transient enhanced diffusion
Keyword(2) simulation
Keyword(3) silicon
Keyword(4) self-interstitial clusters
1st Author's Name Masashi UEMATSU
1st Author's Affiliation NTT System Electronics Laboratories()
Date 1997/9/25
Paper # ICD97-121
Volume (vol) vol.97
Number (no) 274
Page pp.pp.-
#Pages 8
Date of Issue