Presentation 1997/9/25
Development of a Universal Diffusion Scheme for a Two-Dimensional Process Simulator
Shigetaka Kumashiro, Hironori Sakamoto,
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Abstract(in English) A scheme which can easily incorporate new diffusion models has been implemented in a two-dimensional process simulator. Compared with the existing PDE solvers used for prototype models development, the new scheme has following features: 1.MUltiple regions can be handled, 2.Impurity pile-up can be modeled by means of the inter-layers placed between the regions, 3.Coupling diffusion flux can be defined between two defferent diffusers in the different regions, 4.Because it is implemented as one function of a full process simulator, both realistic initial conditions and realistic device structures can be handled.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Proccss simulator / Partial differential equation solver / Impurity diffusion / Universal diffusion scheme / Point-defect pair diffusion model
Paper # ICD97-120
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Conference Date 1997/9/25(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Development of a Universal Diffusion Scheme for a Two-Dimensional Process Simulator
Sub Title (in English)
Keyword(1) Proccss simulator
Keyword(2) Partial differential equation solver
Keyword(3) Impurity diffusion
Keyword(4) Universal diffusion scheme
Keyword(5) Point-defect pair diffusion model
1st Author's Name Shigetaka Kumashiro
1st Author's Affiliation ULSI Device Development Laboratories, NEC Corporation()
2nd Author's Name Hironori Sakamoto
2nd Author's Affiliation ULSI Device Development Laboratories, NEC Corporation
Date 1997/9/25
Paper # ICD97-120
Volume (vol) vol.97
Number (no) 274
Page pp.pp.-
#Pages 8
Date of Issue