| Presentation | 1997/8/22 900MHz CMOS LNA with Mesh-Arrayed MOSFETs G. Hayashi, H. Kimura, H. Shimomura, A. Matsuzawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A 900MHz low-noise amplifier(LNA) has been developed using 0.35μm CMOS technology. MA-MOS (Mesh-Arrayed MOSFET) is used, which realized excellent high-frequency, performance with non-salisaide process. The influence of substrate loss on bonding pads is analyzed for the optimization of the LNA. As a result, the LNA provides a minimum noise figure (NFmin) of 1.8dB, forward gain of 14.8dB and IIP3 of -2.5dBm with low power consumption of 9mW. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | High-frequency / CMOS / LNA / Front-end / Noise Figure |
| Paper # | ICD97-118 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 1997/8/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 900MHz CMOS LNA with Mesh-Arrayed MOSFETs |
| Sub Title (in English) | |
| Keyword(1) | High-frequency |
| Keyword(2) | CMOS |
| Keyword(3) | LNA |
| Keyword(4) | Front-end |
| Keyword(5) | Noise Figure |
| 1st Author's Name | G. Hayashi |
| 1st Author's Affiliation | Corporate Semiconductor Development Division Matsushita Electric Ind. Co., LTD.() |
| 2nd Author's Name | H. Kimura |
| 2nd Author's Affiliation | Corporate Semiconductor Development Division Matsushita Electric Ind. Co., LTD. |
| 3rd Author's Name | H. Shimomura |
| 3rd Author's Affiliation | Corporate Semiconductor Development Division Matsushita Electric Ind. Co., LTD. |
| 4th Author's Name | A. Matsuzawa |
| 4th Author's Affiliation | Corporate Semiconductor Development Division Matsushita Electric Ind. Co., LTD. |
| Date | 1997/8/22 |
| Paper # | ICD97-118 |
| Volume (vol) | vol.97 |
| Number (no) | 230 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |