Presentation 1997/6/20
Low-Voltage 0.35μm CMOS/SOI Technology for High-Performance ASIC's
T Naka, A. O. Adan, S Kaneko, D. Urabe, K. Higashi, A. Kagisawa,
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Abstract(in English) We describe a 0.35μm CMOS Process technology for low-voltage, high-performance ASIC's, implemented on ultra-thin SOI (Shallow SIM0X) wafers. Stable high speed, Low-Vth transistors for low-voltage operation at 1.5V were developed by integrating a salicided dual gate process. Shallow SIMOX devices dissipate 1/5 of the Bulk-Si power. A prototype PLL circuit operates at fmax of 1.6GHz at 1.5V supply voltage, demonstrating the excellent performance of this technology.
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Keyword(in English) High-performance ASIC's / Shallow SIMOX / Low-voltage operation / Salicide / Dual-gate
Paper # ED97-54
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Conference Date 1997/6/20(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Low-Voltage 0.35μm CMOS/SOI Technology for High-Performance ASIC's
Sub Title (in English)
Keyword(1) High-performance ASIC's
Keyword(2) Shallow SIMOX
Keyword(3) Low-voltage operation
Keyword(4) Salicide
Keyword(5) Dual-gate
1st Author's Name T Naka
1st Author's Affiliation SHARP Corp., IC Group, VLSI Devel. Lab.()
2nd Author's Name A. O. Adan
2nd Author's Affiliation SHARP Corp., IC Group, VLSI Devel. Lab.
3rd Author's Name S Kaneko
3rd Author's Affiliation SHARP Corp., IC Group, VLSI Devel. Lab.
4th Author's Name D. Urabe
4th Author's Affiliation SHARP Corp., IC Group, VLSI Devel. Lab.
5th Author's Name K. Higashi
5th Author's Affiliation SHARP Corp., IC Group, VLSI Devel. Lab.
6th Author's Name A. Kagisawa
6th Author's Affiliation SHARP Corp., IC Group, VLSI Devel. Lab.
Date 1997/6/20
Paper # ED97-54
Volume (vol) vol.97
Number (no) 111
Page pp.pp.-
#Pages 6
Date of Issue