Presentation 1997/6/19
A potential of CMOS as an ultra-high speed and high frequency LSI
Akira Matsuzawa,
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Abstract(in English) This paper reviews and discusses the potential of CMOS device as an ultra-high speed and high frequency LSI. The status of the fundamental RF characteristics and actual performances of CMS, such as f_T, noise, distortion, high frequency performance, especially under the low power operation will be analyzed. As a result, actual circuit performances will be much improved with a progress of the scaled technology, though it currently degrades under the low operating current.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) high frequency / high speed / CMOS / LSI / cutoff frequency / noise / distortion
Paper # ED97-50
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Conference Date 1997/6/19(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A potential of CMOS as an ultra-high speed and high frequency LSI
Sub Title (in English)
Keyword(1) high frequency
Keyword(2) high speed
Keyword(3) CMOS
Keyword(4) LSI
Keyword(5) cutoff frequency
Keyword(6) noise
Keyword(7) distortion
1st Author's Name Akira Matsuzawa
1st Author's Affiliation Corporate Semiconductor Development Division Matsushita Electric Ind. Co., LTD.()
Date 1997/6/19
Paper # ED97-50
Volume (vol) vol.97
Number (no) 110
Page pp.pp.-
#Pages 8
Date of Issue