Presentation 1997/6/19
Circuit Techniques for 0.5V Single Power Supply Operated Devices
Toru Iwata, Yutaka Terada, Hironori Akamatsu, Akira Matsuzawa, Hiroyuki Yamauchi,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) This paper present "Gate-Over-Driving CMOS (GO-CMOS) Architecture" for sub-1V operation. The key feature are as follows, (1) instead of using a very low Vt (-0.1V or less) for all transistors, the power supply voltage is boosted for logic circuitry with a small load capacitance; (2) the gate voltage of the driver transistors is boosted to drive the heavily loaded output nodes. Power is supplied to the driver transistors directly from the external supply voltage to avoid stressing the embedded charge pump circuit. GO-CMOS achieves 1/2 gate delay time or 1/15 power dissipation in 0.5V operation.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) sub-1V / low Vt / charge pump / low power dissipation
Paper # ED97-47
Date of Issue

Conference Information
Committee ICD
Conference Date 1997/6/19(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Circuit Techniques for 0.5V Single Power Supply Operated Devices
Sub Title (in English)
Keyword(1) sub-1V
Keyword(2) low Vt
Keyword(3) charge pump
Keyword(4) low power dissipation
1st Author's Name Toru Iwata
1st Author's Affiliation Corporate Semiconductor Development Division Matsushita Electric Industrial C0.,LTD.()
2nd Author's Name Yutaka Terada
2nd Author's Affiliation Corporate Semiconductor Development Division Matsushita Electric Industrial C0.,LTD.
3rd Author's Name Hironori Akamatsu
3rd Author's Affiliation Corporate Semiconductor Development Division Matsushita Electric Industrial C0.,LTD.
4th Author's Name Akira Matsuzawa
4th Author's Affiliation Corporate Semiconductor Development Division Matsushita Electric Industrial C0.,LTD.
5th Author's Name Hiroyuki Yamauchi
5th Author's Affiliation Corporate Semiconductor Development Division Matsushita Electric Industrial C0.,LTD.
Date 1997/6/19
Paper # ED97-47
Volume (vol) vol.97
Number (no) 110
Page pp.pp.-
#Pages 7
Date of Issue