| Presentation | 1997/7/25 Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's sang-Gi Lee, Hyunsang Hwang, Young-Jong Lee, Jeong-Mo Hwang, Ju-Young Jeong, Oh-Kyong Kwon, Chang-Hyo Lee, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We investigate TDDB (Time Dependent Dielectric Breakdown) chracteristics of MOSFETs due to diffusion of hydrogen related species during ILD (Inter-Layer-Dielectric) processing. The ILD films dependent on electron trap generation rate and mobile ion were measured by constant current FN stress method and BTS (Bias Temperature Stress). The results show that the HLD/BPSG and PETEOS/BPSG structure cause more defects inside the gate oxide than the PETEOS/USG. The effect of mobile ion shows no noticeable difference in different dielectric structures. Also, the PETEOS/USG structure shows enhanced gate oxide lifetime but more device degradation possibly due to poor quality Si-SiO_2 interface due to the lower process temperature. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Constant Current Stress / Bias Temperature Stress / Electron Trapping Rate, Mobile Ion. |
| Paper # | ICD97-93 |
| Date of Issue |
| Conference Information | |
| Committee | ICD |
|---|---|
| Conference Date | 1997/7/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
|---|---|
| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's |
| Sub Title (in English) | |
| Keyword(1) | Constant Current Stress |
| Keyword(2) | Bias Temperature Stress |
| Keyword(3) | Electron Trapping Rate, Mobile Ion. |
| 1st Author's Name | sang-Gi Lee |
| 1st Author's Affiliation | Dept. of Physics Hanyang Univ.() |
| 2nd Author's Name | Hyunsang Hwang |
| 2nd Author's Affiliation | Advanced Technology Laboratory., LG Semicon Co., |
| 3rd Author's Name | Young-Jong Lee |
| 3rd Author's Affiliation | Advanced Technology Laboratory., LG Semicon Co., |
| 4th Author's Name | Jeong-Mo Hwang |
| 4th Author's Affiliation | Advanced Technology Laboratory., LG Semicon Co., |
| 5th Author's Name | Ju-Young Jeong |
| 5th Author's Affiliation | Dept. of Elec. Eng., The Univ. of Suwon. |
| 6th Author's Name | Oh-Kyong Kwon |
| 6th Author's Affiliation | Dept. of Elec. Eng., Hanyang Univ. |
| 7th Author's Name | Chang-Hyo Lee |
| 7th Author's Affiliation | Dept. of Physics Hanyang Univ. |
| Date | 1997/7/25 |
| Paper # | ICD97-93 |
| Volume (vol) | vol.97 |
| Number (no) | 198 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |