| Presentation | 1997/7/25 A 5-Mask CMOS Technology utilizing SOI Substrate Kiyotaka Imai, Hideaki Onishi, Hiroyuki Nakamura, Yoshihisa Matsubara, Takashi Ishigami, Tetsuya Sakai, Tadahiko Horiuchi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A 5-mask CMOS technology on a thin SOI film is presented. Channel doping, N^+/P^+ dual gate electrode doping and source/drain doping for NMOS and PMOS are performed with only 1 mask by utilizing counter doping. Furthermore, an ultra-thin Ti silicidation process is applied to reduce the high sheet resistance of thin SOI film to 9 Ω/sq. Applying these techniques to a 0.25-μm CMOS on a 50-nm SOI film, we achieved a drain current of 264 μA/μm for the NMOS, and 133 μA/μm for the PMOS at Vgs=Vds=1.5 V. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CMOS / counter-doping / fully-depleted / titanium silicide / SOI |
| Paper # | ICD97-90 |
| Date of Issue |
| Conference Information | |
| Committee | ICD |
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| Conference Date | 1997/7/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A 5-Mask CMOS Technology utilizing SOI Substrate |
| Sub Title (in English) | |
| Keyword(1) | CMOS |
| Keyword(2) | counter-doping |
| Keyword(3) | fully-depleted |
| Keyword(4) | titanium silicide |
| Keyword(5) | SOI |
| 1st Author's Name | Kiyotaka Imai |
| 1st Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation() |
| 2nd Author's Name | Hideaki Onishi |
| 2nd Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation |
| 3rd Author's Name | Hiroyuki Nakamura |
| 3rd Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation |
| 4th Author's Name | Yoshihisa Matsubara |
| 4th Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation |
| 5th Author's Name | Takashi Ishigami |
| 5th Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation |
| 6th Author's Name | Tetsuya Sakai |
| 6th Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation |
| 7th Author's Name | Tadahiko Horiuchi |
| 7th Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation |
| Date | 1997/7/25 |
| Paper # | ICD97-90 |
| Volume (vol) | vol.97 |
| Number (no) | 198 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |