講演名 | 1997/7/25 Degradation and Recovery in the Ferroelectric Properties of Pt/Pb(Zr,Ti)O_3/Pt capacitor caused by SiO_2 Film Deposition , |
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抄録(英) | The degradation of ferroelectric properties of a Pt/Pb(Zr,Ti)O_3(PZT)/Pt capacitor due to the interlayer dielectric (ILD) process of ferroelectric random access memory (FRAM) device fabrication process was studied. The SiO_2 film for the ILD layer was deposited by two methods; electron cyclotron resonance chemical vapor deposition (ECR CVD) using SiH_4/N_2O gas and atmospheric pressure thermal CVD using tetra ethyl ortho-silicate (TEOS) and O_3 (O_3-TEOS CVD). The ferroelectric properties of Pt/PZT/Pt capacitor were degraded by the SiO_2 deposition, particularly varied according to the deposition condition and method. The degradation of ferroelectric property of Pt/PZT/Pt capacitor covered by the O_3-TEOS SiO_2 was less severe than that of ECR CVD-SiO_2. However, the remnant polarization of the capacitors covered by any SiO_2 film was found to be above 10μC/cm^2 at 5 V. Moreover, the ferroelectricity of the capacitors damaged by the SiO_2 film deposition was recovered by a post-annealing. |
キーワード(和) | |
キーワード(英) | SiO_2 / Pb(Zr,Ti)O_3 / FRAM / remnant polarization / ECR CVD / O_3-TEOS |
資料番号 | ICD97-86 |
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研究会情報 | |
研究会 | ICD |
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開催期間 | 1997/7/25(から1日開催) |
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講演論文情報詳細 | |
申込み研究会 | Integrated Circuits and Devices (ICD) |
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本文の言語 | ENG |
タイトル(和) | |
サブタイトル(和) | |
タイトル(英) | Degradation and Recovery in the Ferroelectric Properties of Pt/Pb(Zr,Ti)O_3/Pt capacitor caused by SiO_2 Film Deposition |
サブタイトル(和) | |
キーワード(1)(和/英) | / SiO_2 |
第 1 著者 氏名(和/英) | / Sejun Oh |
第 1 著者 所属(和/英) | Semiconductor R&D Center, Samsung Electronics Co., Ltd |
発表年月日 | 1997/7/25 |
資料番号 | ICD97-86 |
巻番号(vol) | vol.97 |
号番号(no) | 198 |
ページ範囲 | pp.- |
ページ数 | 6 |
発行日 |