Presentation 1997/7/25
Oxide Reliability Improvement Controlling Microstructures of Substrate/Oxide and Oxide/Gate Interfaces
Jiro Yugami, Toshiyuki Mine, Toshihiko Itoga, Makoto Ohkura,
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Abstract(in English) For future ULSIs, the oxide reliability problem is key issue to realize low power, high-speed devices keeping it's reliability. In MOSFET structure, gate oxide consist from substrate/oxide interface, oxide and oxide/gate interface. Therefore, to improve oxide reliability, it is important to control these three component structures individually. In this report, experiments to control structures of above two interfaces using (1) combination of closed wet cleaning system and load-lock oxidation system and (2) ultra-thin film deposition CVD technique are described. By controlling these structures, the oxide reliability improved.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) gate oxide / oxide reliability / interface structure
Paper # ICD97-83
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Conference Date 1997/7/25(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Oxide Reliability Improvement Controlling Microstructures of Substrate/Oxide and Oxide/Gate Interfaces
Sub Title (in English)
Keyword(1) gate oxide
Keyword(2) oxide reliability
Keyword(3) interface structure
1st Author's Name Jiro Yugami
1st Author's Affiliation Central Research Laboratory, Hitachi., Ltd.()
2nd Author's Name Toshiyuki Mine
2nd Author's Affiliation Central Research Laboratory, Hitachi., Ltd.
3rd Author's Name Toshihiko Itoga
3rd Author's Affiliation Central Research Laboratory, Hitachi., Ltd.
4th Author's Name Makoto Ohkura
4th Author's Affiliation Central Research Laboratory, Hitachi., Ltd.
Date 1997/7/25
Paper # ICD97-83
Volume (vol) vol.97
Number (no) 198
Page pp.pp.-
#Pages 7
Date of Issue