| Presentation | 1997/7/25 Shallow Trench Isolation Characteristics with High-Density-Plasma (HDP) CVD Oxide for Deep-Submicron CMOS Technologies Seungho Lee, Kuchul Jung, Sungwoong Chung, Jeongdong Choe, Wouns Yang, Youngjong Lee, Jinwon Park, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper systematically studies STI characteristics with deposition conditions of High Density Plasma CVD oxide gap-fill material, together with trench sidewall oxide thicknesses. The results show negligible sputter effect of HDP even with low Deposition/Sputter ratio and Si etch damage on the trench sidewall surface observed from leakage current. The leakage current is, however, mainly introduced from the weak trench top corners due to post CMP processes when they are exposed during successive HF cleanings in weak active edges. The results also show excellent isolation characteristics and narrow width effect. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Shallow Trench Isolation / Gap-Fill Material / Trench Sidewall Oxide / HDP Oxide |
| Paper # | ICD97-80 |
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| Committee | ICD |
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| Conference Date | 1997/7/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Shallow Trench Isolation Characteristics with High-Density-Plasma (HDP) CVD Oxide for Deep-Submicron CMOS Technologies |
| Sub Title (in English) | |
| Keyword(1) | Shallow Trench Isolation |
| Keyword(2) | Gap-Fill Material |
| Keyword(3) | Trench Sidewall Oxide |
| Keyword(4) | HDP Oxide |
| 1st Author's Name | Seungho Lee |
| 1st Author's Affiliation | Advanced Technology Laboratory, LG Semicon Co.,() |
| 2nd Author's Name | Kuchul Jung |
| 2nd Author's Affiliation | Advanced Technology Laboratory, LG Semicon Co., |
| 3rd Author's Name | Sungwoong Chung |
| 3rd Author's Affiliation | Device Group, Process Group |
| 4th Author's Name | Jeongdong Choe |
| 4th Author's Affiliation | Device Group, Process Group |
| 5th Author's Name | Wouns Yang |
| 5th Author's Affiliation | Advanced Technology Laboratory, LG Semicon Co., |
| 6th Author's Name | Youngjong Lee |
| 6th Author's Affiliation | Advanced Technology Laboratory, LG Semicon Co., |
| 7th Author's Name | Jinwon Park |
| 7th Author's Affiliation | Device Group, Process Group |
| Date | 1997/7/25 |
| Paper # | ICD97-80 |
| Volume (vol) | vol.97 |
| Number (no) | 198 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |