| 講演名 | 1997/7/24 Study On Characteristics of Ge Based ARL for DUV Lithography , |
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| PDFダウンロードページ | PDFダウンロードページへ |
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| 抄録(英) | Germanium based ARL (Anti Reflective layer) having high conformality over toppgraphy and removable during resist strip process was developed and its various characteristics were investigated. The ARLs were composed with GeNx and (Ge, Si)Nx and fabricated by reactive RF sputtering. The optical constants of various Ge based materials were measured and the good ARL performance for DUV lithography was obtained. Since the GeNx ss dissolved in water during resist develop process, it can not be used. Therefore, silicon was added to solve this problem. Thin film characteristics of (Ge,Si)Nx compound were analyzed using XRD, XPS, AES, SEM and the ARL characteristic was confirmed by resist patterning. Because the (Ge,Si)Nx material is removable by H_2SO_4 strip, yet most of current inorganic ARL is not, it has advantage for process simplicity. |
| キーワード(和) | |
| キーワード(英) | ARL / refractive index / reflection / lithography / CD variation |
| 資料番号 | ICD97-60 |
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| 研究会情報 | |
| 研究会 | ICD |
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| 開催期間 | 1997/7/24(から1日開催) |
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| 申込み研究会 | Integrated Circuits and Devices (ICD) |
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| 本文の言語 | ENG |
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| タイトル（英） | Study On Characteristics of Ge Based ARL for DUV Lithography |
| サブタイトル（和） | |
| キーワード(1)（和/英） | / ARL |
| 第 1 著者 氏名（和/英） | / Yongbeom Kim |
| 第 1 著者 所属（和/英） | Process Development 1, Semiconductor R&D, Samsung Electronics Co. Ltd. |
| 発表年月日 | 1997/7/24 |
| 資料番号 | ICD97-60 |
| 巻番号（vol） | vol.97 |
| 号番号（no） | 197 |
| ページ範囲 | pp.- |
| ページ数 | 6 |
| 発行日 | |