Presentation 1997/5/23
Embedded DRAM Technology : DRAM merges to ASIC
Keiichiroh Abe, Masashi Hashimoto,
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Abstract(in English) An overview of an ASIC process technology logic based embedded DRAM test chip results are reported. This test chip employed 1T1C type cell. 0.5um ASIC process technology is applied. Initial silicon is over 80% yield without changing of process. And this chip has high speed data rate maximum 200MB/S. We confirmed that ASIC module feasibility.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Embedded DRAM / ASIC / Sense Amplifier
Paper # ICD97-25
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Conference Date 1997/5/23(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Embedded DRAM Technology : DRAM merges to ASIC
Sub Title (in English)
Keyword(1) Embedded DRAM
Keyword(2) ASIC
Keyword(3) Sense Amplifier
1st Author's Name Keiichiroh Abe
1st Author's Affiliation Texas Instruments Japan, Ltd. Miho plant Design Center()
2nd Author's Name Masashi Hashimoto
2nd Author's Affiliation Texas Instruments Japan, Ltd. Miho plant Design Center
Date 1997/5/23
Paper # ICD97-25
Volume (vol) vol.97
Number (no) 57
Page pp.pp.-
#Pages 6
Date of Issue