Presentation 1997/5/22
A Low Power/Wide Voltage-Range DRAM with 0.8V Array Operation
Hiroshi Kato, Teruhiko Amano, Sigehiro Kuge, Masaki Tsukude, Takeshi Fujino, Kazutami Arimoto,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Recently, multi-media system needs to the variable memory application. It especially demands the low-voltage, low-power, high-speed and wide-voltage-range-operation DRAMs. But in. DRAM operation under 1V, it is hard to obtain both stable sense operation and high speeds. This paper describes new core techniques for low voltage and low power DRAMs with wide-range operation. To achieve the stable sense operation with high speed at 0.8V, a charge-transfer pre-sensing scheme (CTPS) with a 1/2Vcc bit-line precharge is proposed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) DRAM / Low Voltage / Low Power / Wide Voltage Range / Charge Transfer
Paper # ICD97-19
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Conference Date 1997/5/22(1days)
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Paper Information
Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Low Power/Wide Voltage-Range DRAM with 0.8V Array Operation
Sub Title (in English)
Keyword(1) DRAM
Keyword(2) Low Voltage
Keyword(3) Low Power
Keyword(4) Wide Voltage Range
Keyword(5) Charge Transfer
1st Author's Name Hiroshi Kato
1st Author's Affiliation Mitsubishi Electric Corporation()
2nd Author's Name Teruhiko Amano
2nd Author's Affiliation Mitsubishi Electric Corporation
3rd Author's Name Sigehiro Kuge
3rd Author's Affiliation Mitsubishi Electric Corporation
4th Author's Name Masaki Tsukude
4th Author's Affiliation Mitsubishi Electric Corporation
5th Author's Name Takeshi Fujino
5th Author's Affiliation Mitsubishi Electric Corporation
6th Author's Name Kazutami Arimoto
6th Author's Affiliation Mitsubishi Electric Corporation
Date 1997/5/22
Paper # ICD97-19
Volume (vol) vol.97
Number (no) 56
Page pp.pp.-
#Pages 8
Date of Issue