Presentation 1997/5/22
A 256Mb SDRAM Using a Register-Controlled Digital DLL
Tadao Aikawa, Hirohiko Mochizuki, Atsusi Hatakeyama, Masato Takita, Shinya Fujioka, Shusaku Yamaguchi, Koichi Nishimura, Yoshinori Okajima, Michiari Kawano, Hideyuki Kojima, Kazuhiro Mizutani, Masao Taguchi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Currently, significant improvements in operating speed of DRAMs are strongly required. It is, thereby, essential to attain maximized data-valid time window for each I/O port while making clock frequencies higher. For this purpose, we developed a 256-Mb synchronous DRAM using a new circuit technique named RDLL (Register Controlled DLL). The resultant clock access time was measured 1ns on our experimental chip. In our design, sense amplifiers have been optimized for low voltage operation through improving transistor biasing scheme and the layout pattern, to expand the supply voltage margin. An innovative memory cell structure, SBC cell was developed using the self-aligned contact technology to make process steps the minimum and moderate lithographic difficulty.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) 256MSDRAM / clock synchronization / DLL / sense amplifier / cylindrical capacitor cell
Paper # ICD97-18
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Conference Date 1997/5/22(1days)
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Paper Information
Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A 256Mb SDRAM Using a Register-Controlled Digital DLL
Sub Title (in English)
Keyword(1) 256MSDRAM
Keyword(2) clock synchronization
Keyword(3) DLL
Keyword(4) sense amplifier
Keyword(5) cylindrical capacitor cell
1st Author's Name Tadao Aikawa
1st Author's Affiliation DRAM Division, LSI Products Group, Fujitsu Limited()
2nd Author's Name Hirohiko Mochizuki
2nd Author's Affiliation DRAM Division, LSI Products Group, Fujitsu Limited
3rd Author's Name Atsusi Hatakeyama
3rd Author's Affiliation DRAM Division, LSI Products Group, Fujitsu Limited
4th Author's Name Masato Takita
4th Author's Affiliation DRAM Division, LSI Products Group, Fujitsu Limited
5th Author's Name Shinya Fujioka
5th Author's Affiliation DRAM Division, LSI Products Group, Fujitsu Limited
6th Author's Name Shusaku Yamaguchi
6th Author's Affiliation DRAM Division, LSI Products Group, Fujitsu Limited
7th Author's Name Koichi Nishimura
7th Author's Affiliation DRAM Division, LSI Products Group, Fujitsu Limited
8th Author's Name Yoshinori Okajima
8th Author's Affiliation DRAM Division, LSI Products Group, Fujitsu Limited
9th Author's Name Michiari Kawano
9th Author's Affiliation DRAM Division, LSI Products Group, Fujitsu Limited
10th Author's Name Hideyuki Kojima
10th Author's Affiliation DRAM Division, LSI Products Group, Fujitsu Limited
11th Author's Name Kazuhiro Mizutani
11th Author's Affiliation DRAM Division, LSI Products Group, Fujitsu Limited
12th Author's Name Masao Taguchi
12th Author's Affiliation DRAM Division, LSI Products Group, Fujitsu Limited
Date 1997/5/22
Paper # ICD97-18
Volume (vol) vol.97
Number (no) 56
Page pp.pp.-
#Pages 6
Date of Issue