Presentation	2002/9/23 Carrier scattering effect in a quasi-Ballistic MOSFET Naoya WADA, Kenji NATORI,
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Abstract(in English)	A sub-100 nm level ultrasmall MOSFET, if properly fabricated and operated, may possibly realize ballistic/quasi-ballistic transport. However, actual MOSFETs so far reported, are at the current level of 30-40% of the ballistic limit. We have developed a novel simulation technique of carrier transport in ultrasmall MOSFETs, and report the result here. They include comparison of various cases: the effective one-subband model and the multi-subband case, and ballistic case versus the phonon scattering effect, etc.
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Keyword(in English)	Ballistic MOSFET / subband / carrier scattering / monte carlo method
Paper #	SDM2002-174
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Conference Information
Committee	SDM
Conference Date	2002/9/23(1days)
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Paper Information
Registration To	Silicon Device and Materials (SDM)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Carrier scattering effect in a quasi-Ballistic MOSFET
Sub Title (in English)
Keyword(1)	Ballistic MOSFET
Keyword(2)	subband
Keyword(3)	carrier scattering
Keyword(4)	monte carlo method
1st Author's Name	Naoya WADA
1st Author's Affiliation	Inst. of. Appl. Phys., Univ. of. Tsukuba()
2nd Author's Name	Kenji NATORI
2nd Author's Affiliation	Inst. of. Appl. Phys., Univ. of. Tsukuba
Date	2002/9/23
Paper #	SDM2002-174
Volume (vol)	vol.102
Number (no)	346
Page	pp.pp.-
#Pages	6
Date of Issue