Presentation | 2002/9/23 Optimization of Lateral Diffusion of Source and Drain for Sub-100-nm Channel Silicon-on-insulator MOSFETs Akihiro KAWAMOTO, Shingo SATO, Yasuhisa OMURA, |
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Abstract(in Japanese) | (See Japanese page) | |
Abstract(in English) | This paper investigates how the lateral diffusion extent (L_), the optimization of L_ | |
Keyword(in Japanese) | (See Japanese page) | |
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Paper # | SDM2002-171 | |
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Committee | SDM |
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Conference Date | 2002/9/23(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Optimization of Lateral Diffusion of Source and Drain for Sub-100-nm Channel Silicon-on-insulator MOSFETs |
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1st Author's Name | Akihiro KAWAMOTO |
1st Author's Affiliation | Faculty of Engineering, Kansai University() |
2nd Author's Name | Shingo SATO |
2nd Author's Affiliation | Faculty of Engineering, Kansai University |
3rd Author's Name | Yasuhisa OMURA |
3rd Author's Affiliation | Faculty of Engineering, Kansai University:High-Technology Research Center |
Date | 2002/9/23 |
Paper # | SDM2002-171 |
Volume (vol) | vol.102 |
Number (no) | 346 |
Page | pp.pp.- |
#Pages | 6 |
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