| Presentation | 2002/6/14 Influence of Si substrate crystal orientation on the properties of (Ba,Sr)TiO_3 M Yamato, H Yamada, K Quazi, T Kikkawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We investigated the influence of Si substrate crystal orientation on the properties of (Ba,Sr)TiO_3. It is found that Si substrate crystal orientation affected not only BST crystal orientation but also the leakage current of the BST film. BST/Si(100) and BST/Si(111) showed lower leakage current than BST/Si(100). The interface state density of Ir/BST/Si capacitor depends on the Si crystal orientation, and BST/Si(111) showed the largest interface state density. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | (Ba,Sr)TiO_3 / BST / dielectric constant / leakage current / interface state density / silicon / crystal orientation |
| Paper # | SDM2002-65 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2002/6/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Influence of Si substrate crystal orientation on the properties of (Ba,Sr)TiO_3 |
| Sub Title (in English) | |
| Keyword(1) | (Ba,Sr)TiO_3 |
| Keyword(2) | BST |
| Keyword(3) | dielectric constant |
| Keyword(4) | leakage current |
| Keyword(5) | interface state density |
| Keyword(6) | silicon |
| Keyword(7) | crystal orientation |
| 1st Author's Name | M Yamato |
| 1st Author's Affiliation | Research Center for Nanodevices and Systems, Hiroshima University() |
| 2nd Author's Name | H Yamada |
| 2nd Author's Affiliation | Research Center for Nanodevices and Systems, Hiroshima University |
| 3rd Author's Name | K Quazi |
| 3rd Author's Affiliation | Research Center for Nanodevices and Systems, Hiroshima University |
| 4th Author's Name | T Kikkawa |
| 4th Author's Affiliation | Research Center for Nanodevices and Systems, Hiroshima University |
| Date | 2002/6/14 |
| Paper # | SDM2002-65 |
| Volume (vol) | vol.102 |
| Number (no) | 134 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |