| Presentation | 2002/6/14 Molybdenum Work Function Control by N^+ Implantation for Dual Gate CMOS Application and Its Influences Takaaki AMADA, Masaki HINO, Nobuhide MAEDA, Kentaro SHIBAHARA, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | An Mo gate work function control technique that uses annealing or N^+ ion implantation has been reported by Ranade et al. We have fabricated Mo-gate MOS diodes, based on their report, with 5-20 nm SiO_2 and found that the gate leakage current was increased as the N^+ implantation dose and implantation energy were increased. Although a work function shift was observed in the C-V characteristics, a hump caused by high-density interface states was found. In these specimens, nitrogen concentration just after the N^+ ion implantation at was about 1x10^<20>cm^<-3>. Nitride formation at the SiO_2/Si interface is considered to be one of the origins for the interface states formation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Work Function / N^+ implantation / Mo gate |
| Paper # | SDM2002-63 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2002/6/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Molybdenum Work Function Control by N^+ Implantation for Dual Gate CMOS Application and Its Influences |
| Sub Title (in English) | |
| Keyword(1) | Work Function |
| Keyword(2) | N^+ implantation |
| Keyword(3) | Mo gate |
| 1st Author's Name | Takaaki AMADA |
| 1st Author's Affiliation | Research Center for Nanodevices and Systems, Hiroshima University() |
| 2nd Author's Name | Masaki HINO |
| 2nd Author's Affiliation | Research Center for Nanodevices and Systems, Hiroshima University |
| 3rd Author's Name | Nobuhide MAEDA |
| 3rd Author's Affiliation | Research Center for Nanodevices and Systems, Hiroshima University |
| 4th Author's Name | Kentaro SHIBAHARA |
| 4th Author's Affiliation | Research Center for Nanodevices and Systems, Hiroshima University |
| Date | 2002/6/14 |
| Paper # | SDM2002-63 |
| Volume (vol) | vol.102 |
| Number (no) | 134 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |