| Presentation | 2002/6/14 The Growth of ZrO_2 and The Gate Insulation Film Characteristic by Limited-Reaction Sputtering The format of Technical Report Kentaro Kawai, Tatsuhiro Hasu, Kousin Monju, Ryou Izumi, Kimihiro Sasaki, Tomonobu Hata, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We present properties of ZrO_2 films which deposited by limited-reaction sputtering. By using metallic target, reduction of interfacial silicate layer can be expected. The ZrO_2 thin films were deposited with varying substrate temperature from R.T. to 300℃, and O_2/(Ar+O_2) flow rate from 3.4% to 10.3%. The best depositing condition to get a highest dielectric constant was investigated. As for leakage current characteristics, the leakage current decreased when the O_2/(Ar+O_2) flow rate was increased. On the other hand, the dielectric constant increased with increasing substrate temperature. We realized highest-k ZrO_2 thin films at 300℃ and O_2/(Ar+O_2) of 4.2%. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | limited-reaction sputtering / ZrO_2 / leakage current / dielectric constant |
| Paper # | SDM2002-62 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2002/6/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The Growth of ZrO_2 and The Gate Insulation Film Characteristic by Limited-Reaction Sputtering The format of Technical Report |
| Sub Title (in English) | |
| Keyword(1) | limited-reaction sputtering |
| Keyword(2) | ZrO_2 |
| Keyword(3) | leakage current |
| Keyword(4) | dielectric constant |
| 1st Author's Name | Kentaro Kawai |
| 1st Author's Affiliation | Graduate School of Natural Science & Technology Kanazawa University() |
| 2nd Author's Name | Tatsuhiro Hasu |
| 2nd Author's Affiliation | Graduate School of Natural Science & Technology Kanazawa University |
| 3rd Author's Name | Kousin Monju |
| 3rd Author's Affiliation | Graduate School of Natural Science & Technology Kanazawa University |
| 4th Author's Name | Ryou Izumi |
| 4th Author's Affiliation | Japan Advanced Institute of Science and Technology |
| 5th Author's Name | Kimihiro Sasaki |
| 5th Author's Affiliation | Graduate School of Natural Science & Technology Kanazawa University |
| 6th Author's Name | Tomonobu Hata |
| 6th Author's Affiliation | Graduate School of Natural Science & Technology Kanazawa University |
| Date | 2002/6/14 |
| Paper # | SDM2002-62 |
| Volume (vol) | vol.102 |
| Number (no) | 134 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |