Presentation	2002/6/14 Deposition technique of HfO_2 film by MOCVD using Hf[N(C_2H_5)_2]_4 K Kubo, T takahashi, H shinriki,
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Abstract(in English)	High-k gate dielectrics have been investigated as alternated SiO_2. HfO_2 film, one of the candidate of next gate dielectrics, was deposited by MOCVD using Hf[N(C_2H_5)_2]_4. In condition of higher temperature and higher O_2 partial pressure, impurities in HfO_2 film was greatly reduced and CV characteristics of HfO_2 was improved. Regrowth of interface SiON film between Si and HfO_2 was not observed after HfO_2 deposition and after post annealing of 500 C respectively. Relation between crystallization and annealing temperature is also discussed.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	high-k / HfO_2 / Hf[N(C_2H_5)_2]_4 / MOCVD
Paper #	SDM2002-61
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Committee	SDM
Conference Date	2002/6/14(1days)
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Paper Information
Registration To	Silicon Device and Materials (SDM)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Deposition technique of HfO_2 film by MOCVD using Hf[N(C_2H_5)_2]_4
Sub Title (in English)
Keyword(1)	high-k
Keyword(2)	HfO_2
Keyword(3)	Hf[N(C_2H_5)_2]_4
Keyword(4)	MOCVD
1st Author's Name	K Kubo
1st Author's Affiliation	Tokyo Electron AT Ltd. Single Wafer Deposition System Deveropment()
2nd Author's Name	T takahashi
2nd Author's Affiliation	Tokyo Electron AT Ltd. Single Wafer Deposition System Deveropment
3rd Author's Name	H shinriki
3rd Author's Affiliation	Tokyo Electron AT Ltd. Single Wafer Deposition System Deveropment
Date	2002/6/14
Paper #	SDM2002-61
Volume (vol)	vol.102
Number (no)	134
Page	pp.pp.-
#Pages	4
Date of Issue