| Presentation | 2002/6/14 Thermal Chemical Vapor Deposition of Zirconium/Hafnium-Silicate Thin-Film Using TEOS and tert-butoxide Seiji INUMIYA, Dawei GAO, Kazuhiro EGUCHI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Zirconium/Hafnium-silicates are the attractive materials for the alternative gate dielectrics, which are applicable to conventional CMOS integrations with polycrystalline silicon gate electrodes. We found the deposition rate enhancement in the thermal chemical vapor deposition by using TEOS and zirconium/hafnium tert-butoxide. The deposited films have desirable ZrO_2/HfO_2 contents of 10 to 30% for the gate dielectrics and they are controllable by mean of the source gas mixture ratio. The concentration of residual carbon is under the detection level of the XPS analysis. The bonding state of the deposited film suggests the high resistance to phase separation and crystallization. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | High-k / gate dielectric / Zr-silicate / Hf-silicate / thermal chemical vapor deposition / TEOS / tert-butoxide |
| Paper # | SDM2002-59 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2002/6/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Thermal Chemical Vapor Deposition of Zirconium/Hafnium-Silicate Thin-Film Using TEOS and tert-butoxide |
| Sub Title (in English) | |
| Keyword(1) | High-k |
| Keyword(2) | gate dielectric |
| Keyword(3) | Zr-silicate |
| Keyword(4) | Hf-silicate |
| Keyword(5) | thermal chemical vapor deposition |
| Keyword(6) | TEOS |
| Keyword(7) | tert-butoxide |
| 1st Author's Name | Seiji INUMIYA |
| 1st Author's Affiliation | Process & Manufacturing Engineering Center, Semiconductor Company, TOSHIBA Corporation() |
| 2nd Author's Name | Dawei GAO |
| 2nd Author's Affiliation | Process & Manufacturing Engineering Center, Semiconductor Company, TOSHIBA Corporation |
| 3rd Author's Name | Kazuhiro EGUCHI |
| 3rd Author's Affiliation | Process & Manufacturing Engineering Center, Semiconductor Company, TOSHIBA Corporation |
| Date | 2002/6/14 |
| Paper # | SDM2002-59 |
| Volume (vol) | vol.102 |
| Number (no) | 134 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |