| Presentation | 2002/6/14 Electrical Characterization of AlO_x:N Gate Dielectric Formed by Layer-by-Layer CVD H MURAKAMI, H YOKOI, W MIZUBAYASHI, H YAMASHITA, X GAO, S MIYAZAKI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Aluminum oxide based dielectrics have been extensively studied as a promising alternate to conventional SiO_2-based gate dielectrics. We have developed a new deposition method for Al oxynitrides (AlO_x:N), where the LPCVD from a gas mixture of N_2O+AlH_3 stabilized with an alkylamine and subsequent NH_3 annealing are alternately repeated. From the C-V measurements, the flat-band voltage shift toward the positive gate voltage side indicates the negative fixed charges as in the case of Al_2O_3. The tunnel current of AlO_x:N is 2 orders of magnitude lower than that of SiO_2. The dielectric degradation process similar to the transition from SILC to SBD reported in SiO_2 and a fairly good reliability comparable to thermally-grown ultrathin SiO_2 have been demonstrated for the stacked gate dielectrics. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | High-k dielectrics / Aluminum oxide / Reliability |
| Paper # | SDM2002-58 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2002/6/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical Characterization of AlO_x:N Gate Dielectric Formed by Layer-by-Layer CVD |
| Sub Title (in English) | |
| Keyword(1) | High-k dielectrics |
| Keyword(2) | Aluminum oxide |
| Keyword(3) | Reliability |
| 1st Author's Name | H MURAKAMI |
| 1st Author's Affiliation | Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University() |
| 2nd Author's Name | H YOKOI |
| 2nd Author's Affiliation | Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University |
| 3rd Author's Name | W MIZUBAYASHI |
| 3rd Author's Affiliation | Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University |
| 4th Author's Name | H YAMASHITA |
| 4th Author's Affiliation | Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University |
| 5th Author's Name | X GAO |
| 5th Author's Affiliation | Iwatani International Corporation |
| 6th Author's Name | S MIYAZAKI |
| 6th Author's Affiliation | Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University |
| Date | 2002/6/14 |
| Paper # | SDM2002-58 |
| Volume (vol) | vol.102 |
| Number (no) | 134 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |