| Presentation | 2002/6/14 Effect of in-situ nitrogen incorporation for electrical characteristics of thin Al_2O_3 gate oxide Yoshiaki TANIDA, Yasuyuki TAMURA, Masaomi YAMAGUCHI, Shinji MIYAGAKI, Chikako YOSHIDA, Yoshihiro SUGIYAMA, Hitoshi TANAKA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We examine the electrical characteristics of nitrogen doped Al_2O_3 MOS capacitors grown by MOCVD. Using the conductance method considering with a leakage current, we find that the nitrogen incorporation reduces the interface state density. Hysteresis of C-V curves is simultaneously decreased to a few tens of mV. The decrease of Dit corresponds to the decrease of the flatband voltage, which suggests the interface trap favors to be negatively charged. We observe the increase of Ion with nitrogen doped Al_2O_3 MOSFET, which is attributed to the decrease of Dit. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Al_2O_3 / gate dielectrics / nitrogen / MOCVD / MOS capacitor / MOSFET |
| Paper # | SDM2002-56 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2002/6/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of in-situ nitrogen incorporation for electrical characteristics of thin Al_2O_3 gate oxide |
| Sub Title (in English) | |
| Keyword(1) | Al_2O_3 |
| Keyword(2) | gate dielectrics |
| Keyword(3) | nitrogen |
| Keyword(4) | MOCVD |
| Keyword(5) | MOS capacitor |
| Keyword(6) | MOSFET |
| 1st Author's Name | Yoshiaki TANIDA |
| 1st Author's Affiliation | Fujitsu Laboratories Ltd.() |
| 2nd Author's Name | Yasuyuki TAMURA |
| 2nd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 3rd Author's Name | Masaomi YAMAGUCHI |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 4th Author's Name | Shinji MIYAGAKI |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 5th Author's Name | Chikako YOSHIDA |
| 5th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 6th Author's Name | Yoshihiro SUGIYAMA |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 7th Author's Name | Hitoshi TANAKA |
| 7th Author's Affiliation | Fujitsu Laboratories Ltd. |
| Date | 2002/6/14 |
| Paper # | SDM2002-56 |
| Volume (vol) | vol.102 |
| Number (no) | 134 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |