| Presentation | 2002/5/17 Investigation of electron irradiation induced defects in single crystal CuInSe_2 thin films Naoki FUJITA, Lee HAE-SEOK, Hiroshi OKADA, Akihiro WAKAHARA, Akira YOSHIDA, Takeshi OHSHIMA, Hisayoshi ITOH, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | For the purpose of investigating the damage over the radiation of CuInSe_2 thin film electrical properties of as-grown and electron irradiated (2MeV and 3MeV) single crystal CuInSe_2 thin films have been characterized. CuJnSe_2 thin films were epitaxially grown on GaAs substrates by RF sputtering. As the electron irradiation exceeded 1× 10^<17>cm^<-2> the carrier density of CuInSe_2 thin films were decreased. Deep Level Transient Spectroscopy (DLTS) measurement of electron irradiated sample showed existence of different kind of deep levels after the high-energy electron irradiation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CuInSe_2 / DLTS / electron irradiation / activation energy / capture cross section |
| Paper # | SDM2002-41 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2002/5/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Investigation of electron irradiation induced defects in single crystal CuInSe_2 thin films |
| Sub Title (in English) | |
| Keyword(1) | CuInSe_2 |
| Keyword(2) | DLTS |
| Keyword(3) | electron irradiation |
| Keyword(4) | activation energy |
| Keyword(5) | capture cross section |
| 1st Author's Name | Naoki FUJITA |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Toyohashi University of Technology() |
| 2nd Author's Name | Lee HAE-SEOK |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Toyohashi University of Technology |
| 3rd Author's Name | Hiroshi OKADA |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Toyohashi University of Technology |
| 4th Author's Name | Akihiro WAKAHARA |
| 4th Author's Affiliation | Department of Electrical and Electronic Engineering, Toyohashi University of Technology |
| 5th Author's Name | Akira YOSHIDA |
| 5th Author's Affiliation | Department of Electrical and Electronic Engineering, Toyohashi University of Technology |
| 6th Author's Name | Takeshi OHSHIMA |
| 6th Author's Affiliation | Japan Atomic Energy Research Institute |
| 7th Author's Name | Hisayoshi ITOH |
| 7th Author's Affiliation | Japan Atomic Energy Research Institute |
| Date | 2002/5/17 |
| Paper # | SDM2002-41 |
| Volume (vol) | vol.102 |
| Number (no) | 81 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |