Presentation 2002/5/17
Investigation of Sputtering Gases on IBS Growth of Si and Ge
Takaharu Ikeda, Haruhiko Konta, Makoto Sugino, Kimihiro Sasaki, Tomonobu Hata,
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Abstract(in English) We have been growing Si/Ge strained-layer superlattice by ion beam sputtering. First, to improve crystallinity and surface roughness of Si or Ge thin film, we discussed of supttering gasses (Kr or Xe) on IBS growth of Si and Ge. First, we examined sputtering by simulation, particles emitted from Si or Ge target have kinetic energy by Kr or Xe ion lower than by Ar ion. Reduction of kinetic energy of sputtered particle is considered to contribute to prepare better crystallinity, because of low radiation damege. We confirmed the effect of sputtering gas, acttually, Si films with Kikuchi-line were prepared by using Kr and Xe sputtering gas.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) ion beam sputtering / Kr / Xe / spettering damege / crystallinity
Paper # SDM2002-36
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Committee SDM
Conference Date 2002/5/17(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Investigation of Sputtering Gases on IBS Growth of Si and Ge
Sub Title (in English)
Keyword(1) ion beam sputtering
Keyword(2) Kr
Keyword(3) Xe
Keyword(4) spettering damege
Keyword(5) crystallinity
1st Author's Name Takaharu Ikeda
1st Author's Affiliation Graduate School of Natural Science & Technology Kanazawa University()
2nd Author's Name Haruhiko Konta
2nd Author's Affiliation Graduate School of Natural Science & Technology Kanazawa University
3rd Author's Name Makoto Sugino
3rd Author's Affiliation Graduate School of Natural Science & Technology Kanazawa University
4th Author's Name Kimihiro Sasaki
4th Author's Affiliation Graduate School of Natural Science & Technology Kanazawa University
5th Author's Name Tomonobu Hata
5th Author's Affiliation Graduate School of Natural Science & Technology Kanazawa University
Date 2002/5/17
Paper # SDM2002-36
Volume (vol) vol.102
Number (no) 81
Page pp.pp.-
#Pages 5
Date of Issue