| Presentation | 2002/5/17 Growth and electronic properties of thick CdTe layers on GaAs by MOVPE Yasuhiro Kawauchi, Tomoaki Ishiguro, Hiroshi Morishita, Takashi Mabuchi, Yasunori Agata, Madan Niraula, Kazuhito Yasuda, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Growths and electronic properties of thick CdTe layers (～100 μm) for X- and γ-ray detectors have been studied. CdTe layers were grown by MOVPE on GaAs substrate. Thick CdTe layers were grown by controlling the substrate temperature during growths. Crystallinities of CdTe layers were improved with increase of the CdTe thickness. The best full width at half maximum (FWHM) value of 45 arcsec. was obtained for thickness of 50 μm, which was comparable with that for high quality bulk CdTe. High crystallinities of obtained CdTe layers were also confirmed by photoluminescence measurements at 4.2 K. Grown layers showed rapid relaxations of compressive stress from 0 to 20 μm. The compressive stress, however, remained above 50 μm. Obtained results showed that high quality thick CdTe layers were grown by MOVPE on GaAs substrates. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOVPE / X-and γ-ray detector / thick CdTe layers / growth characteristics / electronic properties |
| Paper # | SDM2002-28 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2002/5/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth and electronic properties of thick CdTe layers on GaAs by MOVPE |
| Sub Title (in English) | |
| Keyword(1) | MOVPE |
| Keyword(2) | X-and γ-ray detector |
| Keyword(3) | thick CdTe layers |
| Keyword(4) | growth characteristics |
| Keyword(5) | electronic properties |
| 1st Author's Name | Yasuhiro Kawauchi |
| 1st Author's Affiliation | Department of Electrical and Computer Engineering Nagoya Institute of Technology() |
| 2nd Author's Name | Tomoaki Ishiguro |
| 2nd Author's Affiliation | Department of Electrical and Computer Engineering Nagoya Institute of Technology |
| 3rd Author's Name | Hiroshi Morishita |
| 3rd Author's Affiliation | Department of Electrical and Computer Engineering Nagoya Institute of Technology |
| 4th Author's Name | Takashi Mabuchi |
| 4th Author's Affiliation | Department of Electrical and Computer Engineering Nagoya Institute of Technology |
| 5th Author's Name | Yasunori Agata |
| 5th Author's Affiliation | Department of Electrical and Computer Engineering Nagoya Institute of Technology |
| 6th Author's Name | Madan Niraula |
| 6th Author's Affiliation | Department of Electrical and Computer Engineering Nagoya Institute of Technology |
| 7th Author's Name | Kazuhito Yasuda |
| 7th Author's Affiliation | Department of Electrical and Computer Engineering Nagoya Institute of Technology |
| Date | 2002/5/17 |
| Paper # | SDM2002-28 |
| Volume (vol) | vol.102 |
| Number (no) | 81 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |