Presentation 2002/5/16
Electroluminescence in AlGaN/GaN HEMTs
Takeshi NAKAO, Yutaka OHNO, Mitsutoshi AKITA, Shigeru KISHIMOTO, Koichi MAEZAWA, Takashi MIZUTANI,
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Abstract(in English) Electroluminescence in AlGaN/GaN HEMTs biased at high drain-source voltages has been investigated. The electroluminescence was observed at the drain edge. This is quite different from the case of AlGaAs/GaAs HEMTs in which the electroluminescence was observed at the gate edge. 2D device simulation was performed to investigate the difference in the EL distribution. The results show that high-density surface traps cause the formation of high-field region at the drain edge. Electroluminescence spectroscopy was also performed. A broad spectrum was obtained in a wavelength range of visible to near-infrared light with a polarization in the direction of parallel to the drain current.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN HEMT / electroluminescence / high field / breakdown
Paper # SDM2002-23
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Committee SDM
Conference Date 2002/5/16(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Electroluminescence in AlGaN/GaN HEMTs
Sub Title (in English)
Keyword(1) GaN HEMT
Keyword(2) electroluminescence
Keyword(3) high field
Keyword(4) breakdown
1st Author's Name Takeshi NAKAO
1st Author's Affiliation Department of Quantum Engineering, Nagoya University()
2nd Author's Name Yutaka OHNO
2nd Author's Affiliation Department of Quantum Engineering, Nagoya University
3rd Author's Name Mitsutoshi AKITA
3rd Author's Affiliation Department of Quantum Engineering, Nagoya University
4th Author's Name Shigeru KISHIMOTO
4th Author's Affiliation Department of Quantum Engineering, Nagoya University
5th Author's Name Koichi MAEZAWA
5th Author's Affiliation Department of Quantum Engineering, Nagoya University
6th Author's Name Takashi MIZUTANI
6th Author's Affiliation Department of Quantum Engineering, Nagoya University
Date 2002/5/16
Paper # SDM2002-23
Volume (vol) vol.102
Number (no) 80
Page pp.pp.-
#Pages 5
Date of Issue