Presentation | 2002/5/16 Electroluminescence in AlGaN/GaN HEMTs Takeshi NAKAO, Yutaka OHNO, Mitsutoshi AKITA, Shigeru KISHIMOTO, Koichi MAEZAWA, Takashi MIZUTANI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Electroluminescence in AlGaN/GaN HEMTs biased at high drain-source voltages has been investigated. The electroluminescence was observed at the drain edge. This is quite different from the case of AlGaAs/GaAs HEMTs in which the electroluminescence was observed at the gate edge. 2D device simulation was performed to investigate the difference in the EL distribution. The results show that high-density surface traps cause the formation of high-field region at the drain edge. Electroluminescence spectroscopy was also performed. A broad spectrum was obtained in a wavelength range of visible to near-infrared light with a polarization in the direction of parallel to the drain current. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN HEMT / electroluminescence / high field / breakdown |
Paper # | SDM2002-23 |
Date of Issue |
Conference Information | |
Committee | SDM |
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Conference Date | 2002/5/16(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Electroluminescence in AlGaN/GaN HEMTs |
Sub Title (in English) | |
Keyword(1) | GaN HEMT |
Keyword(2) | electroluminescence |
Keyword(3) | high field |
Keyword(4) | breakdown |
1st Author's Name | Takeshi NAKAO |
1st Author's Affiliation | Department of Quantum Engineering, Nagoya University() |
2nd Author's Name | Yutaka OHNO |
2nd Author's Affiliation | Department of Quantum Engineering, Nagoya University |
3rd Author's Name | Mitsutoshi AKITA |
3rd Author's Affiliation | Department of Quantum Engineering, Nagoya University |
4th Author's Name | Shigeru KISHIMOTO |
4th Author's Affiliation | Department of Quantum Engineering, Nagoya University |
5th Author's Name | Koichi MAEZAWA |
5th Author's Affiliation | Department of Quantum Engineering, Nagoya University |
6th Author's Name | Takashi MIZUTANI |
6th Author's Affiliation | Department of Quantum Engineering, Nagoya University |
Date | 2002/5/16 |
Paper # | SDM2002-23 |
Volume (vol) | vol.102 |
Number (no) | 80 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |