| Presentation | 2002/5/16 Compositional inhomogeneity in buried structure of AlGaN Tomoaki Sano, Motoaki Iwaya, Shinji Terao, Shingo Mochizuki, Tetuya Nakamura, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Low dislocation density AlGaN was achieved on GaN with a groove covered with low temperature deposited AlN. Inhomogeneity of AlN fraction exists in the buried groove area, which causes crack of the film by inhomogeneous stress. Inhomogeneity was found to be suppressed by controlling NH_3 flow rate during growth. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN / lateral growth / compositional inhomogeneity / crack |
| Paper # | SDM2002-21 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2002/5/16(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Compositional inhomogeneity in buried structure of AlGaN |
| Sub Title (in English) | |
| Keyword(1) | AlGaN |
| Keyword(2) | lateral growth |
| Keyword(3) | compositional inhomogeneity |
| Keyword(4) | crack |
| 1st Author's Name | Tomoaki Sano |
| 1st Author's Affiliation | High-Tech Research Center, Faculty of Science and Technology, Meijo University() |
| 2nd Author's Name | Motoaki Iwaya |
| 2nd Author's Affiliation | High-Tech Research Center, Faculty of Science and Technology, Meijo University |
| 3rd Author's Name | Shinji Terao |
| 3rd Author's Affiliation | High-Tech Research Center, Faculty of Science and Technology, Meijo University |
| 4th Author's Name | Shingo Mochizuki |
| 4th Author's Affiliation | High-Tech Research Center, Faculty of Science and Technology, Meijo University |
| 5th Author's Name | Tetuya Nakamura |
| 5th Author's Affiliation | High-Tech Research Center, Faculty of Science and Technology, Meijo University |
| 6th Author's Name | Satoshi Kamiyama |
| 6th Author's Affiliation | High-Tech Research Center, Faculty of Science and Technology, Meijo University |
| 7th Author's Name | Hiroshi Amano |
| 7th Author's Affiliation | High-Tech Research Center, Faculty of Science and Technology, Meijo University |
| 8th Author's Name | Isamu Akasaki |
| 8th Author's Affiliation | High-Tech Research Center, Faculty of Science and Technology, Meijo University |
| Date | 2002/5/16 |
| Paper # | SDM2002-21 |
| Volume (vol) | vol.102 |
| Number (no) | 80 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |