| Presentation | 2002/5/16 Hight-Quality AlN Eptaxial film and GaN growth on the AlN/Sapphire Templates by MOVPE Mitsuhiro Tanaka, Tomohiko Shibata, Masahiro Sakai, Osamu Oda, Hideto Miyake, Kazumasa Hiramatsu, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We demonstrate the growth of high-quality GaN using underlying high-quality epitaxial AlN films on C-plane sapphire as a new buffer layer. The obtained GaN films were atomically flat and the full width at half maximum (FWHM) values of the X-ray rocking curve (XRC) were 61 arcsec and 232arcsec for (0004) and (20-24), respectively. XRC-FWHM values of the underlying AlN film were 44arcsec and 1450arcsec for (0004) and (20-24), respectively. It was found that the GaN XRC value for (0004) was much smaller than that of conventional GaN. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOVPE / AlN / GaN / Epitaxial / film / template |
| Paper # | SDM2002-14 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2002/5/16(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Hight-Quality AlN Eptaxial film and GaN growth on the AlN/Sapphire Templates by MOVPE |
| Sub Title (in English) | |
| Keyword(1) | MOVPE |
| Keyword(2) | AlN |
| Keyword(3) | GaN |
| Keyword(4) | Epitaxial |
| Keyword(5) | film |
| Keyword(6) | template |
| 1st Author's Name | Mitsuhiro Tanaka |
| 1st Author's Affiliation | NGK INSULATORS, LTD.() |
| 2nd Author's Name | Tomohiko Shibata |
| 2nd Author's Affiliation | NGK INSULATORS, LTD. |
| 3rd Author's Name | Masahiro Sakai |
| 3rd Author's Affiliation | NGK INSULATORS, LTD. |
| 4th Author's Name | Osamu Oda |
| 4th Author's Affiliation | NGK INSULATORS, LTD. |
| 5th Author's Name | Hideto Miyake |
| 5th Author's Affiliation | Dept. of Electrical and electronic engineering, Mie University |
| 6th Author's Name | Kazumasa Hiramatsu |
| 6th Author's Affiliation | Dept. of Electrical and electronic engineering, Mie University |
| 7th Author's Name | Hiroyasu Ishikawa |
| 7th Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology |
| 8th Author's Name | Takashi Egawa |
| 8th Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology |
| 9th Author's Name | Takashi Jimbo |
| 9th Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology |
| Date | 2002/5/16 |
| Paper # | SDM2002-14 |
| Volume (vol) | vol.102 |
| Number (no) | 80 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |