| Presentation | 2002/1/22 CdF_2/CaF_2 Resonant Tunneling Diode Grown on Si(111) and Si(100) Substrate using Nano-area Epitaxy Masahiro WATANABE, Tatsuya ISHIKAWA, Masaki Matsuda, Tohru Kanazawa, Masahiro ASADA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | CdF_2-CaF_2 heterostructures are attractive materials for quantum devices on silicon substrate because of large conduction band discontinuity (～2.9eV) at the heterointerface. We have studied crystal growth technique and current-voltage characteristics of CdF_2-CaF_2 double barrier resonant tunneling diode (DBRTD) structures grown by using nano-area (～100nm) epitaxy with partially ionized beam and molecular beam epitaxy technique on Si(111) and Si(100) substrate. Room temperature negative differential resistance of submicron-siza CdF_2/CaF_2 DBRTD grown on Si(100) substrate has been demonstrated for the first time. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CaF_2 / CdF_2 / Resonant Tunneling Diode / Epitaxial growth / Nano-area epitaxy / Negative differential resistance |
| Paper # | 2001-ED-242,2001-SDM-245 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2002/1/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | CdF_2/CaF_2 Resonant Tunneling Diode Grown on Si(111) and Si(100) Substrate using Nano-area Epitaxy |
| Sub Title (in English) | |
| Keyword(1) | CaF_2 |
| Keyword(2) | CdF_2 |
| Keyword(3) | Resonant Tunneling Diode |
| Keyword(4) | Epitaxial growth |
| Keyword(5) | Nano-area epitaxy |
| Keyword(6) | Negative differential resistance |
| 1st Author's Name | Masahiro WATANABE |
| 1st Author's Affiliation | Department of Information Processing, Tokyo Institute of Technology : PRESTO, JST() |
| 2nd Author's Name | Tatsuya ISHIKAWA |
| 2nd Author's Affiliation | Department of Information Processing, Tokyo Institute of Technology |
| 3rd Author's Name | Masaki Matsuda |
| 3rd Author's Affiliation | Department of Information Processing, Tokyo Institute of Technology |
| 4th Author's Name | Tohru Kanazawa |
| 4th Author's Affiliation | Department of Information Processing, Tokyo Institute of Technology |
| 5th Author's Name | Masahiro ASADA |
| 5th Author's Affiliation | Department of Information Processing, Tokyo Institute of Technology |
| Date | 2002/1/22 |
| Paper # | 2001-ED-242,2001-SDM-245 |
| Volume (vol) | vol.101 |
| Number (no) | 621 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |