| Presentation | 2002/1/14 Non-uniform Boron Penetration through Nitrided Oxide in PMOSFETs Takayuki Aoyama, Hidenobu Fukutome, Kunihiro Suzuki, Hiroko Tashiro, Yoko Tada, Hiroshi Arimoto, Kei Horiuchi, Shigehiko Hasegawa, Hisao Nakashima, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We analyzed the ability of nitrided oxides to suppress boron penetration and found that two-dimensional nitrogen distribution in the film is indispensable to explain the experimental data. Simulating the processes of a non-uniform gate insulator, we obtained good agreement with experimental data. Our analysis showed that boron partially penetrated the weak areas of the interface layer of gate insulator. This was verified experimentally using scanning-tunneling microscopy. In addition, we found that wet-cleaning prior to the formation of the nitrided oxide made the boron penetration non-uniform. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Nitrided oxide / Boron penetration / PMOS / STM |
| Paper # | 2001-SDM-207 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2002/1/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Non-uniform Boron Penetration through Nitrided Oxide in PMOSFETs |
| Sub Title (in English) | |
| Keyword(1) | Nitrided oxide |
| Keyword(2) | Boron penetration |
| Keyword(3) | PMOS |
| Keyword(4) | STM |
| 1st Author's Name | Takayuki Aoyama |
| 1st Author's Affiliation | FUJITSU LABORATORIES LTD() |
| 2nd Author's Name | Hidenobu Fukutome |
| 2nd Author's Affiliation | FUJITSU LABORATORIES LTD |
| 3rd Author's Name | Kunihiro Suzuki |
| 3rd Author's Affiliation | FUJITSU LABORATORIES LTD |
| 4th Author's Name | Hiroko Tashiro |
| 4th Author's Affiliation | FUJITSU LABORATORIES LTD |
| 5th Author's Name | Yoko Tada |
| 5th Author's Affiliation | FUJITSU LABORATORIES LTD |
| 6th Author's Name | Hiroshi Arimoto |
| 6th Author's Affiliation | FUJITSU LABORATORIES LTD |
| 7th Author's Name | Kei Horiuchi |
| 7th Author's Affiliation | FUJITSU LABORATORIES LTD |
| 8th Author's Name | Shigehiko Hasegawa |
| 8th Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University |
| 9th Author's Name | Hisao Nakashima |
| 9th Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University |
| Date | 2002/1/14 |
| Paper # | 2001-SDM-207 |
| Volume (vol) | vol.101 |
| Number (no) | 571 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |