Presentation 2001/12/13
Fabrication of SiC Super Junction Structure and Analysis of Electrical Characteristics for Power Devices
Mineo Miura, Shun-ichi Nakamura, Tsunenobu Kimoto, Jun Suda, Hiroyuki Matsunami,
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Abstract(in English) In Si power devices, a new type of structure called Super Junction(SJ)has been proposed to reduce on-resistance. SiC is an attractive wide band gap semiconductor with high breakdown field. By applying the SJ structure to SiC, it is expected to achieve ultra low on-resistance for high voltage devices. Optimization of SiC SJ structure and analysis of SiC SJ device characteristics are performed using a device simulator. SiC SJ structure was fabricated by CVD growth. The SJ structure with uniform layer thickness and abrupt doping profile was realized.
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Keyword(in English) silicon carbide / super junction / power device
Paper # SDM2001-197
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Committee SDM
Conference Date 2001/12/13(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of SiC Super Junction Structure and Analysis of Electrical Characteristics for Power Devices
Sub Title (in English)
Keyword(1) silicon carbide
Keyword(2) super junction
Keyword(3) power device
1st Author's Name Mineo Miura
1st Author's Affiliation Department of Electronic Science and Engineering, Kyoto University()
2nd Author's Name Shun-ichi Nakamura
2nd Author's Affiliation Department of Electronic Science and Engineering, Kyoto University
3rd Author's Name Tsunenobu Kimoto
3rd Author's Affiliation Department of Electronic Science and Engineering, Kyoto University
4th Author's Name Jun Suda
4th Author's Affiliation Department of Electronic Science and Engineering, Kyoto University
5th Author's Name Hiroyuki Matsunami
5th Author's Affiliation Department of Electronic Science and Engineering, Kyoto University
Date 2001/12/13
Paper # SDM2001-197
Volume (vol) vol.101
Number (no) 515
Page pp.pp.-
#Pages 5
Date of Issue