| Presentation | 2001/9/21 Study on Non-Stationary Process in Silicon Oxide Film Growth by Simulations Kenji Nanjo, Yasumi Kotani, Yasuhisa Omura, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper describes simulation results of oxide growth process in the conventional furnace tube oxidation on the basis of advanced models for realistic diffusion constant of oxygen molecules through the whole system and boundary conditions at O_2 gas/SiO_2 and SiO_2/Si substrate interfaces. It is clearly shown that the non-stationary state of oxygen flow and reaction is substantial in the initial stage of oxidation. Availability of values of physical parameters extracted from experimental results is examined by past experimental results and the ever-reported first-principle simulation results. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Oxidation / Non-stationary process / Interstitial Si / Simulation |
| Paper # | VLD2001-73,SDM2001-147 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2001/9/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on Non-Stationary Process in Silicon Oxide Film Growth by Simulations |
| Sub Title (in English) | |
| Keyword(1) | Oxidation |
| Keyword(2) | Non-stationary process |
| Keyword(3) | Interstitial Si |
| Keyword(4) | Simulation |
| 1st Author's Name | Kenji Nanjo |
| 1st Author's Affiliation | High-Technology Research Center, Kansai Uuniversity() |
| 2nd Author's Name | Yasumi Kotani |
| 2nd Author's Affiliation | High-Technology Research Center, Kansai University |
| 3rd Author's Name | Yasuhisa Omura |
| 3rd Author's Affiliation | High-Technology Research Center, Kansai University |
| Date | 2001/9/21 |
| Paper # | VLD2001-73,SDM2001-147 |
| Volume (vol) | vol.101 |
| Number (no) | 321 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |