Presentation 2001/9/20
Verification for high frequency MOSFET equivalent circuits
Hiroaki KAWANO, Manabu NISHIZAWA, Hiroaki UENO, Seiwa OOSHIRO, Mitiko MIURA-MATTAUSCH,
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Abstract(in English) The parameter extractions for high frequency MOSFET equivalent circuit were performed by using the high frequency characteristics by device simulations. The bulk resistance reduction with decreasing the gate length was observed. Since this result shows that it is important to describe the bulk resistance with physical accuracy, we proposed the new equivalent circuit in which the bulk resistance was divided into three resistances, and analyzed the extracted results. Then it is observed that the resistances between source/drain junctions and bulk decrease with decreasing the gate length. Additionally, the parameter extractions from the measurement results were also performed, and the proposed equivalent circuit and gate length dependence of the bulk resistances were verified.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) MOSFET / high frequency equivalent circuit / bulk resistance / Y parameter
Paper # VLD2001-71,SDM2001-145
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Conference Information
Committee SDM
Conference Date 2001/9/20(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Verification for high frequency MOSFET equivalent circuits
Sub Title (in English)
Keyword(1) MOSFET
Keyword(2) high frequency equivalent circuit
Keyword(3) bulk resistance
Keyword(4) Y parameter
1st Author's Name Hiroaki KAWANO
1st Author's Affiliation Hiroshima University, Graduate School of Advanced Sciences of Matter()
2nd Author's Name Manabu NISHIZAWA
2nd Author's Affiliation Hiroshima University, Graduate School of Advanced Sciences of Matter
3rd Author's Name Hiroaki UENO
3rd Author's Affiliation Hiroshima University, Graduate School of Advanced Sciences of Matter
4th Author's Name Seiwa OOSHIRO
4th Author's Affiliation Hiroshima University, Graduate School of Advanced Sciences of Matter
5th Author's Name Mitiko MIURA-MATTAUSCH
5th Author's Affiliation Hiroshima University, Graduate School of Advanced Sciences of Matter
Date 2001/9/20
Paper # VLD2001-71,SDM2001-145
Volume (vol) vol.101
Number (no) 320
Page pp.pp.-
#Pages 5
Date of Issue