Presentation | 2001/6/30 High Performance 600V LDMOSFET with a Polysilicon and a Metal Field Plate for SOI High Voltage Integrated Circuits Mueng-Ryul Lee, Oh-Kyong Kwon, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have developed high performance 600V lateral double-diffused MOSFETs(LDMOSFETs) with dual field plates on SOI layer thickness of 0.15μm for high voltage integrated circuits(HVICs). The dual field plates of 600V SOI LDMOSFETs are formed by polysilicon gate process on 8000Å-thick field oxide and first metalization process on 2μm-thick oxide. The dual field plates increase the amount of drift region charge by fulfilling the RESURF principle, then improve the performance of the specific on-resistance. The fabricated SOI LDMOSFETs have the specific on-resistance of 62mΩcm^2 with breakdown voltage of 632V. This is the best-reported result for 600V LDMOSFETs. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | SOI / LDMOSFET / RESURF / dual field plates |
Paper # | ED2001-105,SDM2001-112 |
Date of Issue |
Conference Information | |
Committee | SDM |
---|---|
Conference Date | 2001/6/30(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
---|---|
Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | High Performance 600V LDMOSFET with a Polysilicon and a Metal Field Plate for SOI High Voltage Integrated Circuits |
Sub Title (in English) | |
Keyword(1) | SOI |
Keyword(2) | LDMOSFET |
Keyword(3) | RESURF |
Keyword(4) | dual field plates |
1st Author's Name | Mueng-Ryul Lee |
1st Author's Affiliation | Div.of Electrical and Computer Engineering, Hanyang University() |
2nd Author's Name | Oh-Kyong Kwon |
2nd Author's Affiliation | Div.of Electrical and Computer Engineering, Hanyang University |
Date | 2001/6/30 |
Paper # | ED2001-105,SDM2001-112 |
Volume (vol) | vol.101 |
Number (no) | 165 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |