Presentation 2001/6/30
High Performance 600V LDMOSFET with a Polysilicon and a Metal Field Plate for SOI High Voltage Integrated Circuits
Mueng-Ryul Lee, Oh-Kyong Kwon,
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Abstract(in English) We have developed high performance 600V lateral double-diffused MOSFETs(LDMOSFETs) with dual field plates on SOI layer thickness of 0.15μm for high voltage integrated circuits(HVICs). The dual field plates of 600V SOI LDMOSFETs are formed by polysilicon gate process on 8000Å-thick field oxide and first metalization process on 2μm-thick oxide. The dual field plates increase the amount of drift region charge by fulfilling the RESURF principle, then improve the performance of the specific on-resistance. The fabricated SOI LDMOSFETs have the specific on-resistance of 62mΩcm^2 with breakdown voltage of 632V. This is the best-reported result for 600V LDMOSFETs.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SOI / LDMOSFET / RESURF / dual field plates
Paper # ED2001-105,SDM2001-112
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Conference Information
Committee SDM
Conference Date 2001/6/30(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High Performance 600V LDMOSFET with a Polysilicon and a Metal Field Plate for SOI High Voltage Integrated Circuits
Sub Title (in English)
Keyword(1) SOI
Keyword(2) LDMOSFET
Keyword(3) RESURF
Keyword(4) dual field plates
1st Author's Name Mueng-Ryul Lee
1st Author's Affiliation Div.of Electrical and Computer Engineering, Hanyang University()
2nd Author's Name Oh-Kyong Kwon
2nd Author's Affiliation Div.of Electrical and Computer Engineering, Hanyang University
Date 2001/6/30
Paper # ED2001-105,SDM2001-112
Volume (vol) vol.101
Number (no) 165
Page pp.pp.-
#Pages 5
Date of Issue