Presentation 2001/6/30
A unified analytical SOI MOSFET model for fully-and partially-depleted SOI devices
YunSeop Yu, SungWoo Hwang, Doyeol Ahn,
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Abstract(in English) We present a new unified analytical front surface potential model. It is valid in all regions of operation(from the sub-threshold to the strong inversion)and an analytical expression for the critical voltage V_c delineating the partially depleted(PD) and the fully depleted(FD) region is introduced. The drift/diffusion equation is used to derive a single formula for the drain current valid in all regions of operation. The model has been fit to a range of the Si film thickness t_ values of SOI device.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) PD / FD / SOI / MOSFET / circuit simulation / surface potential / subthreshold / strong inversion
Paper # ED2001-104,SDM2001-111
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Committee SDM
Conference Date 2001/6/30(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A unified analytical SOI MOSFET model for fully-and partially-depleted SOI devices
Sub Title (in English)
Keyword(1) PD
Keyword(2) FD
Keyword(3) SOI
Keyword(4) MOSFET
Keyword(5) circuit simulation
Keyword(6) surface potential
Keyword(7) subthreshold
Keyword(8) strong inversion
1st Author's Name YunSeop Yu
1st Author's Affiliation Department of Electronics Engineering, Korea University:Institute of Quantum Information & Processing Systems, University of Seoul()
2nd Author's Name SungWoo Hwang
2nd Author's Affiliation Department of Electronics Engineering, Korea University:Institute of Quantum Information & Processing Systems, University of Seoul
3rd Author's Name Doyeol Ahn
3rd Author's Affiliation Institute of Quantum Information & Processing Systems, University of Seoul
Date 2001/6/30
Paper # ED2001-104,SDM2001-111
Volume (vol) vol.101
Number (no) 165
Page pp.pp.-
#Pages 6
Date of Issue